Datasheet > HE7601SG_06

HE7601SG_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
OPNEXT		二极管
页数	文件大小	规格书
4页	90K
描述
GaAlAs Infrared Emitting Diode

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HE7601SG_06 数据手册

HE7601SG

GaAlAs Infrared Emitting Diode

ODE-208-023 (Z)

Rev.0

Oct. 27, 2006

Description

The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable

as a light source for optical control devices and sensors.

Features

Package Type

• HE7601SG: SG1

Internal Circuit

•

High efficiency and high output power

Absolute Maximum Ratings

(T_C= 25°C)

Item

Forward current

Symbol

Ratings

250

Unit

I_F

Reverse voltage

V_R

Operating temperature

Storage temperature

Topr

Tstg

–20 to +60

–40 to +90

°C

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Optical output power

Peak wavelength

Spectral width

Forward voltage

Reverse current

Capacitance

Symbol

P_O

Min

740

—

Typ

—

Max

—

Unit

Test Conditions

—

λp

∆λ

V_F

I_R

770

—

800

I_F= 200 mA

V_R= 3 V

—

2.5

100

—

µA

t_r

—

V_R= 0 V, f = 1 MHz

I_F= 50 mA

Rise time

—

Fall time

t_f

—

I_F= 50 mA

Rev.0 Oct. 27, 2006 page 1 of 4

12 3 4

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