HE7601SG
GaAlAs Infrared Emitting Diode
ODE-208-023 (Z)
Rev.0
Oct. 27, 2006
Description
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable
as a light source for optical control devices and sensors.
Features
Package Type
• HE7601SG: SG1
Internal Circuit
1
•
High efficiency and high output power
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Forward current
Symbol
Ratings
250
Unit
mA
V
IF
Reverse voltage
VR
3
Operating temperature
Storage temperature
Topr
Tstg
–20 to +60
–40 to +90
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Symbol
PO
Min
30
740
—
Typ
—
Max
—
Unit
mW
nm
nm
V
Test Conditions
—
λp
∆λ
VF
IR
770
50
—
800
60
IF = 200 mA
IF = 200 mA
IF = 200 mA
VR = 3 V
—
2.5
100
—
—
—
µA
pF
Ct
tr
—
30
10
10
VR = 0 V, f = 1 MHz
IF = 50 mA
Rise time
—
—
ns
Fall time
tf
—
—
ns
IF = 50 mA
Rev.0 Oct. 27, 2006 page 1 of 4