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HE7601SG_06 PDF预览

HE7601SG_06

更新时间: 2022-04-23 23:00:11
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4页 90K
描述
GaAlAs Infrared Emitting Diode

HE7601SG_06 数据手册

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HE7601SG  
GaAlAs Infrared Emitting Diode  
ODE-208-023 (Z)  
Rev.0  
Oct. 27, 2006  
Description  
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable  
as a light source for optical control devices and sensors.  
Features  
Package Type  
HE7601SG: SG1  
Internal Circuit  
1
High efficiency and high output power  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Forward current  
Symbol  
Ratings  
250  
Unit  
mA  
V
IF  
Reverse voltage  
VR  
3
Operating temperature  
Storage temperature  
Topr  
Tstg  
–20 to +60  
–40 to +90  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Optical output power  
Peak wavelength  
Spectral width  
Forward voltage  
Reverse current  
Capacitance  
Symbol  
PO  
Min  
30  
740  
Typ  
Max  
Unit  
mW  
nm  
nm  
V
Test Conditions  
λp  
∆λ  
VF  
IR  
770  
50  
800  
60  
IF = 200 mA  
IF = 200 mA  
IF = 200 mA  
VR = 3 V  
2.5  
100  
µA  
pF  
Ct  
tr  
30  
10  
10  
VR = 0 V, f = 1 MHz  
IF = 50 mA  
Rise time  
ns  
Fall time  
tf  
ns  
IF = 50 mA  
Rev.0 Oct. 27, 2006 page 1 of 4  

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