Datasheet > OPC9400-37

OPC9400-37

更新时间： 2024-11-02 01:21:15

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MARKTECH		/
页数	文件大小	规格书
1页	1323K
描述
LED Chip Infrared

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OPC9400-37 数据手册

LED Chip Infrared

Product No: OPC9400-37

Radiation

Type

Electrodes

Infrared

GaAs

P (anode) up

Typ370

UNIT:um

P Electrode

GaAs HOMO Layer

Emission Area

N Electrode

Physical Characteristics & Structure

Material: GaAs

Bond Pad Size: 115um diameter

Anode Metalization: Gold Alloy

Cathode Metalization: Gold Alloy

Junction Size: 370um x 370u

Thickness: 280um

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Forward Voltage

Reverse Voltage

Radiant Power*

Peak Wavelength

Spectral Bandwidth at 50%

Φe

λp

∆λ0.5

If=20mA

Ir=10uA

If=20mA

0.4

940

1.4

* LED chip is mounted on TO-18 gold header without resin coating.

Absolute Maximum Ratings (Ta = 25ºC)

Continuous Maximum Forward Current: 50mA (DC)

Reverse Voltage: 5V (IR=10uA)

Storage Temperature

while on mylar membrane: 0 to 40 ºC

after removal from mylar membrane: -30 to 100 ºC

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All

operating parameters must be validated for each customer application by the customer.

2014-04-24

Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com

TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: 518-785-4725 • EMAIL: info@marktechopto.com

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