Datasheet > OPC9400-24_15

OPC9400-24_15

更新时间： 2024-02-22 09:54:41

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MARKTECH		/
页数	文件大小	规格书
1页	866K
描述
LED Chip Infrared

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OPC9400-24_15 数据手册

LED Chip Infrared

Product No: OPC9400-24

Radiation

Type

Electrodes

Infrared

AlGaAs/GaAs

P (anode) up

Typ240

UNIT: μm

P Electrode

P AlGaAsWindowLayer

GaAs HOMOLayer

NGaAsSubstrate

Emission Area

N Electrode

Physical Characteristics & Structure

Material: AlGaAs/GaAs

Junction Size: 240um x 240um

Thickness: 160um

Bond Pad Size: 120um diameter

Anode Metalization: Gold Alloy

Cathode Metalization: Gold Alloy

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Forward Voltage

Reverse Voltage

If=20mA

Ir=5uA

1.5

Radiant Power*

Peak Wavelength

Spectral Bandwidth at 50%

Φe

λp

∆λ0.5

If=20mA

1.5

940

* LED chip is mounted on TO-18 gold header without resin coating.

Absolute Maximum Ratings (Ta = 25ºC)

Continuous Maximum Forward Current: 50mA (DC)

Reverse Voltage: 5V (IR=10uA)

Storage Temperature

while on mylar membrane: 0 to 40 ºC

after removal from mylar membrane: -30 to 100 ºC

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All

operating parameters must be validated for each customer application by the customer.

2014-04-24

Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com

TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: 518-785-4725 • EMAIL: info@marktechopto.com

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