Datasheet > OPA9441F

OPA9441F

更新时间： 2024-11-23 12:26:47

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	97K
描述
Infrared LED Chip

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中文翻译

获取价格

数据手册

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OPA9441F 数据手册

Infrared LED Chip

OPA9441F

GaAlAs/GaAs

Substrate

GaAs (N Type)

1. Material

Epitaxial Layer GaAlAs(P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

3. Electro-Optical

Characteristics

V_F

V_R

P_O

λ_P

Forward Voltage

Reverse Voltage

Power

1.45

1.55

IF=100mA

IR=10uA

IF=100mA

940

IF=20mA

Wavelength

∆λ

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

--------------------------- 14.7mil x 14.7mil

--------------------------- 15.7mil x 15.7mil

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

---------------------------

135um

11mil

6.7mil

(b)

(c)

(d)

(e)

(a)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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