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OPA9437EU

更新时间: 2024-11-23 12:26:47
品牌 Logo 应用领域
可天士 - KODENSHI 红外LED光电
页数 文件大小 规格书
1页 95K
描述
Infrared LED Chip

OPA9437EU 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.67Is Samacsys:N
光电设备类型:INFRARED LEDBase Number Matches:1

OPA9437EU 数据手册

  
Infrared LED Chip  
OPA9437EU  
GaAlAs/GaAs  
Substrate  
GaAs (P Type)  
1. Material  
Epitaxial Layer GaAlAs(N/P Type)  
N(Cathode) Side Gold Alloy  
2. Electrode  
P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal)  
Parameter Symbol Min  
Typ  
Max  
Unit  
Condition  
3. Electro-Optical  
Characteristics  
VF  
VR  
PO  
λP  
Forward Voltage  
Reverse Voltage  
Power  
1.3  
1.45  
V
IF=30mA  
8
V
IR=10uA  
IF=100mA  
IF=20mA  
IF=20mA  
9
13  
920  
45  
mW  
nm  
nm  
Wavelength  
∆λ  
Note : Power is measured by Sorter E/T system with bare chip.  
(a) Emission Area  
(b) Bottom Area  
--------------------- 14mil x  
--------------------- 15mil x  
--------------------- 130um  
--------------------- 8.2mil  
14mil  
15mil  
4. Mechanical Data  
(c) Bonding Pad  
(d) Chip Thickness  
(e) Junction Height  
---------------------  
2mil  
(b)  
(c)  
(d)  
(e)  
(a)  
N Side Electrode  
P Side Electrode  
AUK Corp.  
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea  
Tel. +82 63 839 1111 Fax. +82 63 835 8259  
www.auk.co.kr  

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