OPA9433

更新时间： 2024-11-26 12:26:47

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	96K
描述
Infrared LED Chip

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中文翻译

获取价格

数据手册

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OPA9433 数据手册

Infrared LED Chip

OPA9433

GaAs/GaAs

Substrate

GaAs (N Type)

1. Material

Epitaxial Layer GaAs (P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

3. Electro-Optical

Characteristics

V_F

V_R

P_O

λ_P

Forward Voltage

Reverse Voltage

Power

1.5

1.6

IF=100mA

IR=10uA

IF=100mA

IF=20mA

9.0

940

Wavelength

∆λ

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

--------------------- 10.8mil x 10.8mil

--------------------- 11.8mil x 11.8mil

--------------------- 130um

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

---------------------

11mil

7.6mil

(b)

(c)

(d)

(e)

(a)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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