Datasheet > OPA9430WDD

OPA9430WDD

更新时间： 2024-11-27 00:33:03

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	74K
描述
Infrared LED Chip

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中文翻译

获取价格

数据手册

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OPA9430WDD 数据手册

Infrared LED Chip

OPA9430WDD

GaAlAs/GaAs

Substrate

GaAs (N Type)

1. Material

Epitaxial Layer GaAlAs (P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter

Forward Voltage

Reverse Voltage

Power

Symbol Min

Typ

Max

Unit

Condition

IF=100mA

IR=10uA

3. Electro-Optical

Characteristics

V_F

1.65

V_R

P_O

λ_P

IF=100mA

940

Wavelength

Δλ

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

----------------------- 11.0mil x 11.0mil

----------------------- 12.0mil x 12.0mil

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

-----------------------

130um

11mil

6.7mil

(b)

(c)

(d)

(e)

(a)

Side Electrode

AUK CORP.

Yakchon Factory, 62-21, 8, Yakchon-ro, Iksan, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

IATF16949

ISO14001

中文翻译

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