OPA9430W1D

更新时间： 2024-11-26 12:01:35

品牌	Logo	应用领域
可天士 - KODENSHI		红外LED 光电
页数	文件大小	规格书
1页	99K
描述
Infrared LED Chip

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中文翻译

获取价格

技术参数
数据手册

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OPA9430W1D 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.67	光电设备类型：	INFRARED LED
Base Number Matches：	1

OPA9430W1D 数据手册

Infrared LED Chip

OPA9430W1D

GaAlAs/GaAs

Substrate

GaAs (N Type)

1. Material

Epitaxial Layer GaAlAs(P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

3. Electro-Optical

Characteristics

V_F

V_R

P_O

λ_P

Forward Voltage

Reverse Voltage

Power

1.55

1.60

IF=100mA

IR=10uA

IF=100mA

940

IF=20mA

Wavelength

∆λ

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

--------------------------- 11.0mil x 11.0mil

--------------------------- 12.0mil x 12.0mil

4. Mechanical Data

(a) Emission Area

(e) Junction Height

---------------------------

120um

8mil

4mil

(b)

(c)

(d)

(e)

(a)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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