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OPA9425AL

更新时间: 2024-11-26 12:26:47
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
1页 100K
描述
Infrared LED Chip

OPA9425AL 数据手册

  
Infrared LED Chip  
OPA9425AL  
GaAs/GaAs  
Substrate  
GaAs  
(N Type)  
1. Material  
Epitaxial Layer GaAs  
(P/N Type)  
N(Cathode) Side Gold Alloy  
2. Electrode  
P(Anode) Side Aluminum Alloy  
Symbol  
Condition  
Parameter  
Min  
Typ  
Max  
Unit  
3. Electro-Optical  
Characteristics  
VF  
IF=20mA  
Forward Voltage  
1.3  
1.45  
V
VR  
IR=10uA  
Reverse Voltage  
8
V
A
B
C
D
E
F
1.14  
1.22  
1.30  
1.38  
1.46  
1.54  
PO  
IF=20mA  
Power  
mW  
λP  
IF=20mA  
IF=20mA  
940  
45  
nm  
nm  
Wavelength  
∆λ  
Note : LED Chip is mounted on TO-18 gold header without resin coati  
(a) Emission Area ----------------------------- 9mil x  
9mil  
----------------------------- 10mil x 10mil  
----------------------------- 130um  
4. Mechanical Data  
(b) Bottom Area  
(c) Bonding Pad  
(d) Chip Thickness  
(e) Junction Height  
-------------------------------  
10mil  
6.5mil  
-------------------------------  
(b)  
(c)  
(d)  
(e)  
(a)  
P Side Electrode  
N Side Electrode  
AUK Corp.  
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, K
Tel. +82 63 839 1111 Fax. +82 63 835 8259  
www.auk.co.kr  

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