Datasheet > OPA9423

OPA9423

更新时间： 2024-11-26 12:26:47

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	97K
描述
Infrared LED Chip

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中文翻译

获取价格

数据手册

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OPA9423 数据手册

Infrared LED Chip

OPA9423

AlGaAs/GaAs

Substrate

GaAs

(N Type)

1. Material

Epitaxial Layer GaAs

(P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Symbol

Condition

IF=20mA

IR=10uA

Parameter

Min

Typ

Max

Unit

3. Electro-Optical

Characteristics

V_F

Forward Voltage

1.3

1.4

V_R

Reverse Voltage

1.54

1.62

1.69

P_O

Power

IF=20mA

H(G1)

λ_P

∆λ

940

IF=20mA

Wavelength

※ Note : Power is measured by Sorter E/T system with bare chip.

※ "Min" of Po is actually "Avg Min"

(a) Emission Area ------------------------------- 8mil x 8mil

4. Mechanical Data

(b) Bottom Area

(d) Chip Thickness

(e) Junction Height

------------------------------- 9mil x 9mil

------------------------------- 110um

----------------------------------

10mil

----------------------------------

6.5mil

(b)

(c)

(d)

(e)

(a)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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