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OPA9423

更新时间: 2024-02-09 12:19:09
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
1页 97K
描述
Infrared LED Chip

OPA9423 数据手册

  
Infrared LED Chip  
OPA9423  
AlGaAs/GaAs  
Substrate  
GaAs  
(N Type)  
1. Material  
Epitaxial Layer GaAs  
(P/N Type)  
N(Cathode) Side Gold Alloy  
P(Anode) Side Gold Alloy  
2. Electrode  
Symbol  
Condition  
IF=20mA  
IR=10uA  
Parameter  
Min  
Typ  
Max  
Unit  
3. Electro-Optical  
Characteristics  
VF  
Forward Voltage  
1.3  
1.4  
V
VR  
F
Reverse Voltage  
8
V
1.54  
1.62  
1.69  
PO  
Power  
G
mW  
IF=20mA  
H(G1)  
λP  
∆λ  
940  
45  
nm  
nm  
IF=20mA  
IF=20mA  
Wavelength  
Note : Power is measured by Sorter E/T system with bare chip.  
"Min" of Po is actually "Avg Min"  
(a) Emission Area ------------------------------- 8mil x 8mil  
4. Mechanical Data  
(b) Bottom Area  
(c) Bonding Pad  
(d) Chip Thickness  
(e) Junction Height  
------------------------------- 9mil x 9mil  
------------------------------- 110um  
----------------------------------  
10mil  
----------------------------------  
6.5mil  
(b)  
(c)  
(d)  
(e)  
(a)  
P Side Electrode  
N Side Electrode  
AUK Corp.  
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea  
Tel. +82 63 839 1111 Fax. +82 63 835 8259  
www.auk.co.kr  

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