Datasheet > OPA9420AL

OPA9420AL

更新时间： 2024-11-26 12:26:47

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	96K
描述
Infrared LED Chip

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中文翻译

获取价格

数据手册

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OPA9420AL 数据手册

Infrared LED Chip

OPA9420AL

GaAs/GaAs

Substrate

GaAs

(N Type)

(P/N Type)

1. Material

Epitaxial Layer GaAs

N(Cathode) Side Gold Alloy

2. Electrode

P(Anode) Side Aluminum Alloy

Symbol

V_F

Condition

IF=20mA

IR=10uA

Parameter

Forward Voltage

Reverse Voltage

Power

Min

Typ

Max

Unit

3. Electro-Optical

Characteristics

1.3

1.45

V_R

1.05

1.13

1.21

1.28

1.36

1.44

1.52

1.59

1.13

1.21

1.28

1.36

1.44

1.52

1.59

1.69

IF=20mA

λ_P

IF=20mA

940

Wavelength

∆λ

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area ----------------------------- 7mil x 7mil

4. Mechanical Data

(b) Bottom Area

(d) Chip Thickness

(e) Junction Height

----------------------------- 8mil x 8mil

----------------------------- 100um

-------------------------------

9.0mil (8mil Available)

4.7mil

-------------------------------

(b)

(c)

(d)

(e)

(a)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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