Datasheet > OPA9415EDD

OPA9415EDD

更新时间： 2024-11-26 12:01:35

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	102K
描述
Infrared LED Chip

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中文翻译

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数据手册

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OPA9415EDD 数据手册

Infrared LED Chip

OPA9415EDD

GaAlAs/GaAs

Substrate

GaAs (N Type)

1. Material

Epitaxial Layer GaAlAs(P/N Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

3. Electro-Optical

Characteristics

V_F

V_R

P_O

λ_P

Forward Voltage

Reverse Voltage

Radiant Power

1.3

IF=250mA

IR=10uA

IF=250mA

940

IF=20mA

Wavelength

∆λ

※ Note : LED Chip is mounted on TO-18 gold header without resin coating.

(a) Emission Area

(b) Bottom Area

--------------------------- 58.5mil x 58.5mil

--------------------------- 60.0mil x 60.0mil

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

---------------------------

128um

11mil

6.7mil

(d)

(e)

P Side Electrode

N Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

中文翻译

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