Datasheet > OPA8530HN

OPA8530HN

更新时间： 2022-04-10 15:01:35

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
1页	99K
描述
Infrared LED Chip

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数据手册

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OPA8530HN 数据手册

Infrared LED Chip

OPA8530HN

High Speed / N Side-Up

GaAlAs/GaAlAs

Substrate

GaAlAs (P Type) Removed

1. Material

Epitaxial Layer GaAlAs (N/P Type)

N(Cathode) Side Gold Alloy

P(Anode) Side Gold Alloy

2. Electrode

Parameter Symbol Min

Typ

Max

Unit

Condition

IF=10uA

IF=50mA

IR=10uA

IF=50mA

3. Electro-Optical

Characteristics

V_F(1)

Forward Voltage

V_F(2)

1.1

1.6

1.8

V_R

P_O

λ_P

Reverse Voltage

Power

850

IF=50mA

Wavelength

∆λ

Rise Time

Fall Time

※ Note : Power is measured by Sorter E/T system with bare chip.

(a) Emission Area

(b) Bottom Area

--------------------- 10.8mil x 10.8mil

--------------------- 11.8mil x 11.8mil

4. Mechanical Data

(d) Chip Thickness

(e) Junction Height

---------------------

110um

7mil

5.5mil

(d)

(e)

(b)

(c)

(a)

N Side Electrode

P Side Electrode

AUK Corp.

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111 Fax. +82 63 835 8259

www.auk.co.kr

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