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OPA8328H PDF预览

OPA8328H

更新时间: 2024-11-23 12:26:47
品牌 Logo 应用领域
可天士 - KODENSHI 红外LED光电
页数 文件大小 规格书
1页 105K
描述
Infrared LED Chip

OPA8328H 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.67Is Samacsys:N
光电设备类型:INFRARED LEDBase Number Matches:1

OPA8328H 数据手册

  
Infrared LED Chip  
OPA8328H  
High Speed  
Substrate  
GaAlAs/GaAlAs  
GaAlAs (N Type) Removed  
1. Material  
Epitaxial Layer GaAlAs (P/N Type)  
N(Cathode) Side Gold Alloy  
P(Anode) Side Gold Alloy  
2. Electrode  
Parameter Symbol Min  
Typ  
Max  
Unit  
V
Condition  
IF=10uA  
IF=50mA  
IR=10uA  
IF=50mA  
3. Electro-Optical  
Characteristics  
VF(1)  
Forward Voltage  
VF(2)  
1.1  
1.7  
2.0  
V
VR  
PO  
λP  
Reverse Voltage  
Power  
4
V
14  
17  
mW  
nm  
830  
IF=50mA  
IF=50mA  
Wavelength  
∆λ  
Tr  
Tf  
45  
25  
14  
nm  
ns  
ns  
Rise Time  
Fall Time  
Note : Power is measured by Sorter E/T system with bare chip.  
(a) Emission Area  
(b) Bottom Area  
--------------------- 10.0mil x 10.0mil  
--------------------- 11.0mil x 11.0mil  
4. Mechanical Data  
(c) Bonding Pad  
(d) Chip Thickness  
(e) Junction Height  
---------------------  
---------------------  
---------------------  
110um  
7mil  
6.3mil  
(b)  
(c)  
(d)  
(e)  
(a)  
P Side Electrode  
N Side Electrode  
AUK Corp.  
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea  
Tel. +82 63 839 1111 Fax. +82 63 835 8259  
www.auk.co.kr  

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