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OPA659IDBVT

更新时间： 2024-10-27 05:58:23
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管PC
页数 文件大小 规格书
25页 931K
描述
Wideband, Unity-Gain Stable, JFET-Input OPERATIONAL AMPLIFIER

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OPA659IDBVT 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOT-23
包装说明：SOT-23, 5 PIN针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：1.14Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：415597
Samacsys Pin Count：5Samacsys Part Category：Integrated Circuit
Samacsys Package Category：SOT23 (5-Pin)Samacsys Footprint Name：dbv-3
Samacsys Released Date：2019-09-28 03:06:01Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.0032 µA25C 时的最大偏置电流 (IIB)：0.00005 µA
最小共模抑制比：68 dB标称共模抑制比：70 dB
频率补偿：YES最大输入失调电流 (IIO)：0.0000025 µA
最大输入失调电压：5000 µVJESD-30 代码：R-PDSO-G5
JESD-609代码：e4长度：2.9 mm
低-偏置：YES低-失调：NO
微功率：NO湿度敏感等级：2
负供电电压上限：-6.5 V标称负供电电压 (Vsup)：-6 V
功能数量：1端子数量：5
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装等效代码：TSOP5/6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：+-3.5/+-6.5 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.45 mm
标称压摆率：2550 V/us子类别：Operational Amplifier
最大压摆率：32 mA供电电压上限：6.5 V
标称供电电压 (Vsup)：6 V表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：650000 kHz
最小电压增益：280宽带：YES
宽度：1.6 mmBase Number Matches：1

OPA659IDBVT 数据手册

 浏览型号OPA659IDBVT的Datasheet PDF文件第2页浏览型号OPA659IDBVT的Datasheet PDF文件第3页浏览型号OPA659IDBVT的Datasheet PDF文件第4页浏览型号OPA659IDBVT的Datasheet PDF文件第5页浏览型号OPA659IDBVT的Datasheet PDF文件第6页浏览型号OPA659IDBVT的Datasheet PDF文件第7页 
OPA659  
www.ti.com........................................................................................................................................................................................... SBOS342–DECEMBER 2008  
Wideband, Unity-Gain Stable, JFET-Input  
OPERATIONAL AMPLIFIER  
1
FEATURES  
DESCRIPTION  
2
•
HIGH BANDWIDTH: 650MHz (G = +1V/V)  
HIGH SLEW RATE: 2550V/µs (4V Step)  
EXCELLENT THD: –78dBc at 10MHz  
LOW INPUT VOLTAGE NOISE: 8.9nV/√Hz  
FAST OVERDRIVE RECOVERY: 8ns  
FAST SETTLING TIME (1% 4V Step): 8ns  
LOW INPUT OFFSET VOLTAGE: ±1mV  
LOW INPUT BIAS CURRENT: ±10pA  
HIGH OUTPUT CURRENT: 70mA  
The OPA659 combines a very wideband, unity-gain  
stable, voltage-feedback operational amplifier with a  
JFET-input stage to offer an ultra-high dynamic range  
amplifier for high impedance buffering in data  
acquisition applications such as oscilloscope  
front-end amplifiers and machine vision applications  
such as photodiode transimpedance amplifiers used  
in wafer inspection.  
•
•
•
•
•
•
•
•
The wide 650MHz unity-gain bandwidth is  
complemented by a very high 2550V/µs slew rate.  
The high input impedance and low bias current  
provided by the JFET input are supported by the low  
8.9nV/√Hz input voltage noise to achieve a very low  
APPLICATIONS  
•
•
•
•
HIGH-IMPEDANCE DATA ACQUISITION INPUT  
AMPLIFIER  
HIGH-IMPEDANCE OSCILLOSCOPE INPUT  
AMPLIFIER  
WIDEBAND PHOTODIODE TRANSIMPEDANCE  
AMPLIFIER  
integrated  
noise  
in  
wideband  
photodiode  
transimpedance applications.  
Broad transimpedance bandwidths are possible with  
the high 350MHz gain bandwidth product of this  
device.  
Where lower speed with lower quiescent current is  
required, consider the OPA656. Where unity-gain  
stability is not required, consider the OPA657.  
WAFER SCANNING EQUIPMENT  
TRANSIMPEDANCE GAIN  
vs FREQUENCY (CD = 22pF)  
+6V  
RELATED  
OPERATIONAL AMPLIFIER  
PRODUCTS  
0.1mF  
10mF  
VOLTAGE  
NOISE  
(nV/√Hz)  
SLEW  
RATE  
(V/µs)  
ROUT  
VOUT  
50W Load  
BW  
(MHz)  
OPA659  
VS  
(V)  
AMPLIFIER  
DEVICE  
DESCRIPTION  
RF  
Unity-Gain  
Stable CMOS  
OPA356  
+5  
±6  
200  
500  
300  
5.80  
6.1  
l
Photo  
Diode  
ID  
CD  
CF  
0.1mF  
Fixed Gain of  
+2V/V  
JFET-Input  
OPA653  
OPA656  
OPA657  
OPA627  
THS4631  
2675  
10mF  
-VB  
-6V  
Unity-Gain  
Stable  
JFET-Input  
±5  
±5  
500  
1600  
16  
290  
700  
55  
7
130  
120  
110  
100  
90  
RF = 1MW, CF = Open  
Gain of +7  
Stable  
JFET-Input  
RF = 100kW, CF = Open  
4.8  
4.5  
7
RF = 10kW,  
CF = Open  
RF = 100kW,  
Unity-Gain  
Stable  
DI-FET-Input  
CF = 0.5pF  
±15  
±15  
80  
RF = 10kW, CF = 1.5pF  
70  
RF = 1kW, CF = Open  
Unity-Gain  
Stable  
60  
105  
900  
JFET-Input  
50  
RF = 1kW, CF = 4.7pF  
40  
100k  
1M  
10M  
100M  
Frequency (Hz)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008, Texas Instruments Incorporated  
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中文翻译

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OPA659IDBVT 替代型号

型号 品牌 替代类型 描述 数据表
OPA659IDBVR TI

完全替代

 Wideband, Unity-Gain Stable, JFET-Input OPERATIONAL AMPLIFIER
OPA653IDBVT TI

类似代替

 Wideband, Fixed Gain, JFET-Input AMPLIFIER
OPA653IDBVR TI

类似代替

 Wideband, Fixed Gain, JFET-Input AMPLIFIER

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