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OPA2111KM PDF预览

OPA2111KM

更新时间: 2024-11-18 22:34:15
品牌 Logo 应用领域
BB 运算放大器放大器电路
页数 文件大小 规格书
13页 233K
描述
Dual Low Noise Precision Difet OPERATIONAL AMPLIFIER

OPA2111KM 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TO-99, 8 PINReach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0005 µA25C 时的最大偏置电流 (IIB):0.000015 µA
最小共模抑制比:82 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电压:5000 µV
JESD-30 代码:O-MBCY-W8JESD-609代码:e0
低-偏置:YES低-失调:NO
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:2端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:METAL封装等效代码:CAN8,.2
封装形状:ROUND封装形式:CYLINDRICAL
电源:+-15 V认证状态:Not Qualified
标称压摆率:2 V/us子类别:Operational Amplifier
最大压摆率:20 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM标称均一增益带宽:2000 kHz
最小电压增益:200000Base Number Matches:1

OPA2111KM 数据手册

 浏览型号OPA2111KM的Datasheet PDF文件第2页浏览型号OPA2111KM的Datasheet PDF文件第3页浏览型号OPA2111KM的Datasheet PDF文件第4页浏览型号OPA2111KM的Datasheet PDF文件第5页浏览型号OPA2111KM的Datasheet PDF文件第6页浏览型号OPA2111KM的Datasheet PDF文件第7页 
®
OPA2111  
Dual Low Noise Precision  
Difet ® OPERATIONAL AMPLIFIER  
FEATURES  
APPLICATIONS  
LOW NOISE: 100% Tested, 8nV/Hz max at  
PRECISION INSTRUMENTATION  
10kHz  
DATA ACQUISITION  
LOW BIAS CURRENT: 4pA max  
LOW OFFSET: 500µV max  
LOW DRIFT: 2.8µV/°C  
TEST EQUIPMENT  
PROFESSIONAL AUDIO EQUIPMENT  
MEDICAL EQUIPMENT  
HIGH OPEN-LOOP GAIN: 114dB min  
DETECTOR ARRAYS  
HIGH COMMON-MODE REJECTION:  
96dB min  
DESCRIPTION  
The OPA2111 is a high precision monolithic  
dielectrically isolated FET (Difet) operational ampli-  
fier. Outstanding performance characteristics allow its  
use in the most critical instrumentation applications.  
+VCC  
8
Noise, bias current, voltage offset, drift, open-loop  
gain, common-mode rejection, and power supply re-  
jection are superior to BIFET® amplifiers.  
–In  
+In  
Very low bias current is obtained by dielectric isola-  
tion with on-chip guarding.  
Noise-Free  
Cascode*  
Laser trimming of thin-film resistors gives very low  
offset and drift. Extremely low noise is achieved with  
patented circuit design techniques. A cascode design  
allows high precision input specifications and reduced  
susceptibility to flicker noise.  
Output  
–VCC  
4
Standard dual op amp pin configuration allows up-  
grading of existing designs to higher performance  
levels.  
*Patented  
OPA2111 Simplified Circuit  
(Each Amplifier)  
BIFET® National Semiconductor Corp., Difet® Burr-Brown Corp.  
International Airport Industrial Park  
Mailing Address: PO Box 11400  
Cable: BBRCORP  
Tucson, AZ 85734  
Street Address: 6730 S. Tucson Blvd.  
Tucson, AZ 85706  
Tel: (520) 746-1111 Twx: 910-952-1111  
Telex: 066-6491  
FAX: (520) 889-1510  
Immediate Product Info: (800) 548-6132  
© 1984 Burr-Brown Corporation  
PDS-540E  
Printed in U.S.A. October, 1993  

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