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OPA1S2384IDRCT

更新时间： 2024-11-04 12:02:39
品牌 Logo 应用领域
德州仪器 - TI 开关放大器
页数 文件大小 规格书
23页 1032K
描述
250-MHz, CMOS Transimpedance Amplifier (TIA) with Integrated Switch and Buffer

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OPA1S2384IDRCT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：HVSON,针数：10
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：1.77放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00005 µA
25C 时的最大偏置电流 (IIB)：0.00005 µA最小共模抑制比：50 dB
标称共模抑制比：68 dB频率补偿：YES
最大输入失调电流 (IIO)：0.00005 µA最大输入失调电压：8000 µV
JESD-30 代码：S-PDSO-N10JESD-609代码：e4
长度：3 mm低-偏置：YES
低-失调：NO微功率：NO
湿度敏感等级：2功能数量：2
端子数量：10最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
可编程功率：NO座面最大高度：1 mm
标称压摆率：110 V/us子类别：Operational Amplifier
最大压摆率：24 mA供电电压上限：6 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：100000 kHz
最小电压增益：15848.931宽带：YES
宽度：3 mmBase Number Matches：1

OPA1S2384IDRCT 数据手册

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OPA1S2384  
OPA1S2385  
www.ti.com  
SBOS645A –DECEMBER 2012–REVISED JUNE 2013  
250-MHz, CMOS Transimpedance Amplifier (TIA)  
with Integrated Switch and Buffer  
Check for Samples: OPA1S2384, OPA1S2385  
1
FEATURES  
DESCRIPTION  
The OPA1S2384 and OPA1S2385 (OPA1S238x)  
2
•
•
•
•
•
•
•
Wide Bandwidth: 250 MHz  
High Slew Rate: 150 V/μs  
Rail-to-Rail Input/Output (I/O)  
Fast Settling  
combine high bandwidth, FET-input operational  
amplifiers with a fast SPST CMOS switch designed  
for applications that require the tracking and capturing  
of fast signals.  
Low Input Bias Current: 3 pA  
High Input Impedance: 1013 Ω || 2 pF  
SPST Switch:  
By providing a 250-MHz gain bandwidth product and  
rail-to-rail input/output swings in single-supply  
operation, the OPA1S238x is capable of wideband  
transimpedance gain and large output signal swing  
simultaneously. Low input bias current and voltage  
noise (6 nV/√Hz) make it possible to amplify  
extremely low-level input signals for maximum signal-  
to-noise ratio.  
–
–
–
Low On-Resistance: 4 Ω  
Low Charge Injection: 1 pC  
Low Leakage Current: 10 pA  
•
Flexible Configuration:  
The characteristics of the OPA1S238x make this  
–
–
–
Transimpedance Gain  
External Hold Capacitor  
Post-Gain  
device ideally suited for use as  
photodiode amplifier.  
a wideband  
In addition, the CMOS switch and subsequent buffer  
amplifier allow the OPA1S238x to be easily  
configured as a fast sample-and-hold circuit. The  
external hold capacitor and post-gain options make  
the OPA1S238x easily adaptable to a wide range of  
speed and accuracy requirements. Note that the  
OPA1S2384 closes the internal switch with a logic-  
high signal, and the OPA1S2385 closes the internal  
switch with a logic-low signal.  
•
•
•
•
•
Single Supply: +2.7 V to +5.5 V  
Quiescent Current: 9.2 mA  
Small Package: 3-mm × 3-mm SON-10  
OPA1S2384: Internal Switch Active High  
OPA1S2385: Internal Switch Active Low  
APPLICATIONS  
The OPA1S238x are optimized for low-voltage  
operation from as low as +2.7 V up to +5.5 V. These  
devices are specified for a temperature range of  
–40°C to +85°C.  
•
Communications:  
–
–
–
Optical Networking: EPON, GPON  
Signal Strength Monitors  
Burst-Mode RSSI  
V+ SC(1)  
V-  
•
•
•
•
Photodiode Monitoring  
Fast Sample-and-Hold Circuits  
Charge Amplifiers  
OPA1S2384/5  
+IN A  
A
B
OUT B  
-IN A  
High-Speed Integrators  
OUT A IN S  
+IN B -IN B  
(1) The OPA1S2384 internal switch is active  
high; the OPA1S2384 internal switch is  
active low.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012–2013, Texas Instruments Incorporated  
 
 
 
 
 
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中文翻译

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OPA1S2384IDRCT 替代型号

型号 品牌 替代类型 描述 数据表
OPA1S2384IDRCR TI

完全替代

 250-MHz, CMOS Transimpedance Amplifier (TIA) with Integrated Switch and Buffer
OPA1S2385IDRCT TI

完全替代

 250-MHz, CMOS Transimpedance Amplifier (TIA) with Integrated Switch and Buffer
OPA1S2385IDRCR TI

类似代替

 250-MHz, CMOS Transimpedance Amplifier (TIA) with Integrated Switch and Buffer

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