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OPA121KU PDF预览

OPA121KU

更新时间: 2024-11-12 11:46:23
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
6页 112K
描述
714451819 Low Cost Precision Difet ® OPERATIONAL AMPLIFIER

OPA121KU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:8.51
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:2673Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:D (R-PDSO-G8)Samacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.00001 µA
25C 时的最大偏置电流 (IIB):0.00001 µA最小共模抑制比:82 dB
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.0002 µA最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:NO
湿度敏感等级:3负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
功率:NO电源:+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:32 V/us
子类别:Operational Amplifier最大压摆率:5 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:2000 kHz最小电压增益:100000
宽带:NO宽度:3.9 mm
Base Number Matches:1

OPA121KU 数据手册

 浏览型号OPA121KU的Datasheet PDF文件第2页浏览型号OPA121KU的Datasheet PDF文件第3页浏览型号OPA121KU的Datasheet PDF文件第4页浏览型号OPA121KU的Datasheet PDF文件第5页浏览型号OPA121KU的Datasheet PDF文件第6页 
®
OPA121  
Low Cost Precision Difet®  
OPERATIONAL AMPLIFIER  
FEATURES  
APPLICATIONS  
LOW NOISE: 6nV/Hz typ at 10kHz  
LOW BIAS CURRENT: 5pA max  
LOW OFFSET: 2mV max  
OPTOELECTRONICS  
DATA ACQUISITION  
TEST EQUIPMENT  
LOW DRIFT: 3µV/°C typ  
MEDICAL EQUIPMENT  
HIGH OPEN-LOOP GAIN: 110dB min  
RADIATION HARD EQUIPMENT  
HIGH COMMON-MODE  
REJECTION: 86dB min  
Case (TO-99) and Substrate  
8
DESCRIPTION  
7
The OPA121 is a precision monolithic dielectrically-  
isolated FET (Difet®) operational amplifier. Out-  
standing performance characteristics are now  
available for low-cost applications.  
+V  
CC  
–In  
2
Noise, bias current, voltage offset, drift, open-loop  
gain, common-mode rejection, and power supply  
rejection are superior to BIFET® amplifiers.  
3
Noise-Free  
Cascode*  
+In  
Very low bias current is obtained by dielectric  
isolation with on-chip guarding.  
6
Output  
Laser-trimming of thin-film resistors gives very low  
offset and drift. Extremely low noise is achieved with  
new circuit design techniques (patented). A new  
cascode design allows high precision input specifica-  
tions and reduced susceptibility to flicker noise.  
2kΩ  
2kΩ  
2kΩ  
2kΩ  
Trim  
1
10kΩ  
10kΩ  
5
Trim  
Standard 741 pin configuration allows upgrading of  
existing designs to higher performance levels.  
4
–V  
*Patented  
CC  
OPA121 Simplified Circuit  
Difet®, Burr-Brown Corp.  
BIFET®, National Semiconductor Corp.  
International Airport Industrial Park  
Mailing Address: PO Box 11400  
Cable: BBRCORP  
Tucson, AZ 85734  
Street Address: 6730 S. Tucson Blvd.  
Tucson, AZ 85706  
Tel: (520) 746-1111 Twx: 910-952-1111  
Telex: 066-6491  
FAX: (520) 889-1510  
Immediate Product Info: (800) 548-6132  
© 1984 Burr-Brown Corporation  
PDS-539F  
Printed in U.S.A. September, 1993  

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