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Z0107MARL1G PDF预览

Z0107MARL1G

更新时间: 2024-01-23 07:33:01
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅
页数 文件大小 规格书
10页 190K
描述
Sensitive Gate Triacs Series Silicon Bidirectional Thyristors

Z0107MARL1G 数据手册

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Z0103MA, Z0107MA,  
Z0109MA  
Sensitive Gate Triacs  
Series  
Silicon Bidirectional Thyristors  
Designed for use in solid state relays, MPU interface, TTL logic and  
any other light industrial or consumer application. Supplied in an  
inexpensive TO92 package which is readily adaptable for use in  
automatic insertion equipment.  
http://onsemi.com  
TRIACS  
1.0 AMPERE RMS  
600 VOLTS  
Features  
OnePiece, InjectionMolded Package  
Blocking Voltage to 600 V  
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all  
possible Combinations of Trigger Sources, and especially for Circuits  
that Source Gate Drives  
MT2  
MT1  
G
All Diffused and Glassivated Junctions for Maximum Uniformity of  
Parameters and Reliability  
Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)  
Commutating di/dt of 1.6 A/msec at 110°C  
High Surge Current of 8 A  
1
1
2
2
3
3
BENT LEAD  
These are PbFree Devices  
STRAIGHT LEAD  
BULK PACK  
TAPE & REEL  
AMMO PACK  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
TO92 (TO226AA)  
Rating  
Symbol Value  
Unit  
CASE 029  
STYLE 12  
Peak Repetitive Off-State Voltage  
V
DRM,  
600  
1.0  
8.0  
V
(1)  
(T = 40 to +125°C)  
V
RRM  
J
MARKING DIAGRAM  
Sine Wave 50 to 60 Hz, Gate Open  
On-State RMS Current  
Full Cycle Sine Wave 50 to 60 Hz  
I
A
A
T(RMS)  
Z01  
10xMA  
YWW G  
G
(T = +50°C)  
C
Peak NonRepetitive Surge Current  
One Full Cycle, Sine Wave 60 Hz  
I
TSM  
(T = 110°C)  
C
2
2
1
2 3  
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.35  
1.0  
A s  
x
Y
WW  
G
= 3,7,9  
= Year  
= Work Week  
Average Gate Power (T = 80°C, t v 8.3 ms)  
P
W
A
C
G(AV)  
Peak Gate Current (t v 20 ms, T = +125°C)  
I
1.0  
J
GM  
= PbFree Package  
Operating Junction Temperature Range  
T
J
40 to  
+125  
°C  
(Note: Microdot may be in either location)  
Storage Temperature Range  
T
stg  
40 to  
+150  
°C  
PIN ASSIGNMENT  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
2
3
Main Terminal 1  
Gate  
Main Terminal 2  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009Rev. 2  
Z0103MA/D  

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