MOSFET - Power, Single
N-Channel
80 V, 3.2 mW, 135 A
NVMFS6H818NL
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVMFS6H818NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
3.2 mW @ 10 V
4.1 mW @ 4.5 V
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
80 V
135 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D (5,6)
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
135
95
A
G (4)
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
S (1,2,3)
N−CHANNEL MOSFET
Power Dissipation
T
C
P
140
70
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
22
q
JA
MARKING
DIAGRAM
T = 100°C
A
16
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.8
1.9
772
W
D
D
R
(Notes 1, 2)
q
JA
1
T = 100°C
A
S
S
S
G
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
D
Source Current (Body Diode)
I
116
707
A
S
XXXXXX = 6H818L
XXXXXX = (NVMFS6H818NL) or
XXXXXX = 818LWF
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 9.3 A)
L(pk)
XXXXXX = (NVMFS6H818NLWF)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
A
Y
= Assembly Location
= Year
L
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
1.1
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2020 − Rev. 0
NVMFS6H818NL/D
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