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MMT10B230T3 PDF预览

MMT10B230T3

更新时间： 2024-01-29 05:28:01
品牌 Logo 应用领域
安森美 - ONSEMI 数据判读及分析中心
页数 文件大小 规格书
6页 52K
描述
Thyristor Surge Protectors

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MMT10B230T3 技术参数

是否无铅：不含铅生命周期：Obsolete
零件包装代码：DO-214包装说明：CASE 403C-01, SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.42
Is Samacsys：N其他特性：UL RECOGNIZED
最大转折电压：265 V配置：SINGLE
最大断态直流电压：170 VJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
子类别：DIACs表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

MMT10B230T3 数据手册

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MMT10B230T3,  
MMT10B260T3,  
MMT10B310T3  
Preferred Device  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
(
)
BIDIRECTIONAL TSPD  
100 AMP SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
• Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec  
Guaranteed at the extended temp range of −20°C to 65°C  
MT1  
MT2  
• The MMT10B230T3 Series is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
• Bidirectional Protection in a Single Device  
• Little Change of Voltage Limit with Transient Amplitude or Rate  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
• Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
• Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation.  
MARKING DIAGRAMS  
• Surface Mount Technology (SMT)  
• Complies with GR1089 Second Level Surge Spec at 500 Amps  
2x10 µsec Waveforms  
YWW  
RPDx  
•
Indicates UL Registered − File #E210057  
• Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG;  
RPDx = Specific Device Code  
MMT10B310T3: RPDJ, and Date Code  
x
Y
= F, G or J  
= Year  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
WW  
= Work Week  
Rating  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
Off−State Voltage − Maximum  
V
DM  
Volts  
MMT10B230T3  
MMT10B260T3  
MMT10B310T3  
"170  
"200  
"270  
†
Device  
Package  
Shipping  
MMT10B230T3  
MMT10B260T3  
MMT10B310T3  
SMB  
12mm Tape and Reel  
(2.5K/Reel)  
Maximum Pulse Surge Short Circuit  
Current Non−Repetitive  
Double Exponential Decay Waveform  
(Notes 1. and 2.) (−20°C to +65°C)  
2 x 10 µsec  
A(pk)  
SMB  
SMB  
12mm Tape and Reel  
(2.5K/Reel)  
I
I
I
"500  
"180  
"100  
PPS1  
PPS2  
PPS3  
12mm Tape and Reel  
(2.5K/Reel)  
10 x 700 µsec  
10 x 1000 µsec  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum Non−Repetitive Rate of  
Change of On−State Current  
Double Exponential Waveform,  
R = 2.0, L = 1.5 µH, C = 1.67 µF,  
di/dt  
"100  
A/µs  
I
= 110A  
pk  
Preferred devices are recommended choices for future use  
and best overall value.  
1. Allow cooling before testing second polarity.  
2. Measured under pulse conditions to reduce heating.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 7  
MMT10B230T3/D  
 
123456

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MMT10B230T3_05 ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT10B230T3G ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT10B260T3 ONSEMI Thyristor Surge Protectors

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MMT10B260T3G ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

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MMT10B310T3 ONSEMI Thyristor Surge Protectors

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MMT10B310T3G ONSEMI Thyristor Surge Protectors High Voltage Bidirectional TSPD

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