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MMT05B230T3 PDF预览

MMT05B230T3

更新时间: 2024-01-04 15:34:03
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置硅浪涌保护器光电二极管
页数 文件大小 规格书
6页 56K
描述
Thyristor Surge Protectors

MMT05B230T3 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:DO-214包装说明:CASE 403C-01, SMT, SMB, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.78其他特性:UL RECOGNIZED
最大转折电压:265 V配置:SINGLE
最大断态直流电压:170 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235认证状态:COMMERCIAL
表面贴装:YES端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

MMT05B230T3 数据手册

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MMT05B230T3,  
MMT05B260T3,  
MMT05B310T3  
Preferred Devices  
Thyristor Surge Protectors  
High Voltage Bidirectional TSPD  
http://onsemi.com  
These Thyristor Surge Protective devices (TSPD) prevent  
overvoltage damage to sensitive circuits by lightning, induction and  
power line crossings. They are breakover−triggered crowbar  
protectors. Turn−off occurs when the surge current falls below the  
holding current value.  
(
)
BIDIRECTIONAL TSPD  
50 AMP SURGE  
265 thru 365 VOLTS  
Secondary protection applications for electronic telecom equipment  
at customer premises.  
High Surge Current Capability: 50 Amps 10 x 1000 µsec, for  
MT1  
MT2  
Controlled Temperature Environments  
The MMT05B230T3 Series is used to help equipment meet various  
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,  
IEC 950, UL 1459 & 1950 and FCC Part 68.  
Bidirectional Protection in a Single Device  
Little Change of Voltage Limit with Transient Amplitude or Rate  
Freedom from Wearout Mechanisms Present in Non−Semiconductor  
Devices  
SMB  
(No Polarity)  
(Essentially JEDEC DO−214AA)  
CASE 403C  
Fail−Safe, Shorts When Overstressed, Preventing Continued  
Unprotected Operation  
MARKING DIAGRAMS  
Surface Mount Technology (SMT)  
Indicates UL Registered − File #E210057  
YWW  
RPBx  
Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;  
MMT05B310T3: RPBJ, and Date Code  
RPBx = Specific Device Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
x
= F, G or J  
= Year  
Rating  
Symbol  
Value  
Unit  
Y
WW  
= Work Week  
Off−State Voltage − Maximum  
V
DM  
Volts  
MMT05B230T3  
MMT05B260T3  
MMT05B310T3  
"170  
"200  
"270  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Maximum Pulse Surge Short Circuit  
Current Non−Repetitive  
Double Exponential Decay Waveform  
(Notes 1. and 2.)  
(−25°C Initial Temperature)  
8 x 20 µsec  
A(pk)  
MMT05B230T3  
MMT05B260T3  
MMT05B310T3  
SMB  
12mm Tape and Reel  
(2.5K/Reel)  
SMB  
SMB  
12mm Tape and Reel  
(2.5K/Reel)  
I
"150  
"100  
"70  
PPS1  
PPS2  
PPS3  
PPS4  
10 x 160 µsec  
10 x 560 µsec  
10 x 1000 µsec  
I
I
I
12mm Tape and Reel  
(2.5K/Reel)  
"50  
Maximum Non−Repetitive Rate of  
Change of On−State Current  
Double Exponential Waveform,  
R = 1.0, L = 1.5 µH, C = 1.67 µF,  
di/dt  
"150  
A/µs  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
I
pk  
= 110A  
1. Allow cooling before testing second polarity.  
Preferred devices are recommended choices for future use  
2. Measured under pulse conditions to reduce heating.  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 7  
MMT05B230T3/D  
 

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