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2N7000RLRMG PDF预览

2N7000RLRMG

更新时间: 2024-02-22 22:30:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管
页数 文件大小 规格书
4页 58K
描述
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS

2N7000RLRMG 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.82
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON

2N7000RLRMG 数据手册

 浏览型号2N7000RLRMG的Datasheet PDF文件第2页浏览型号2N7000RLRMG的Datasheet PDF文件第3页浏览型号2N7000RLRMG的Datasheet PDF文件第4页 
2N7000  
Preferred Device  
Small Signal MOSFET  
200 mAmps, 60 Volts  
N−Channel TO−92  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
200 mAMPS  
60 VOLTS  
RDS(on) = 5 W  
MAXIMUM RATINGS  
Rating  
Drain Source Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
N−Channel  
V
D
DSS  
Drain−Gate Voltage (R = 1.0 MW)  
V
V
60  
GS  
DGR  
Gate−Source Voltage  
− Continuous  
V
20  
40  
Vdc  
Vpk  
GS  
G
− Non−repetitive (t 50 ms)  
p
GSM  
Drain Current  
− Continuous  
− Pulsed  
mAdc  
I
200  
500  
D
S
I
DM  
Total Power Dissipation @ T = 25°C  
P
350  
2.8  
mW  
mW/°C  
C
D
Derate above 25°C  
TO−92  
CASE 29  
STYLE 22  
Operating and Storage Temperature  
Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
1
1
Symbol  
Max  
357  
300  
Unit  
°C/W  
°C  
2
2
3
3
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Maximum Lead Temperature for  
Soldering Purposes, 1/16from case  
for 10 seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
2N  
7000  
AYWW G  
G
1
3
Source  
Drain  
2
Gate  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 6  
2N7000/D  

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