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2N7000RLRM PDF预览

2N7000RLRM

更新时间: 2024-02-16 18:47:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 61K
描述
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92

2N7000RLRM 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.82
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON

2N7000RLRM 数据手册

 浏览型号2N7000RLRM的Datasheet PDF文件第2页浏览型号2N7000RLRM的Datasheet PDF文件第3页浏览型号2N7000RLRM的Datasheet PDF文件第4页 
2N7000  
Preferred Device  
Small Signal MOSFET  
200 mAmps, 60 Volts  
N–Channel TO–92  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Drain Source Voltage  
Drain–Gate Voltage (R  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
200 mAMPS  
60 VOLTS  
V
DSS  
= 1.0 M)  
V
DGR  
60  
GS  
R
= 5  
DS(on)  
Gate–Source Voltage  
– Continuous  
V
±ā20  
±ā40  
Vdc  
Vpk  
GS  
N–Channel  
– Non–repetitive (t 50 µs)  
V
GSM  
p
D
Drain Current  
– Continuous  
– Pulsed  
mAdc  
I
200  
500  
D
I
DM  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
C
G
Operating and Storage Temperature  
Range  
T , T  
–55 to  
+150  
°C  
J
stg  
S
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to  
Ambient  
R
357  
°C/W  
TO–92  
CASE 29  
Style 22  
θJA  
Maximum Lead Temperature for  
Soldering Purposes, 1/16from case  
for 10 seconds  
T
300  
°C  
L
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
2N7000  
YWW  
1
3
Source  
Drain  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 5  
2N7000/D  

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