5秒后页面跳转
2N6349G PDF预览

2N6349G

更新时间: 2024-02-22 14:23:16
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关
页数 文件大小 规格书
8页 91K
描述
800V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, LEAD FREE, CASE 221A-07, 3 PIN

2N6349G 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.72外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:8 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

2N6349G 数据手册

 浏览型号2N6349G的Datasheet PDF文件第2页浏览型号2N6349G的Datasheet PDF文件第3页浏览型号2N6349G的Datasheet PDF文件第4页浏览型号2N6349G的Datasheet PDF文件第5页浏览型号2N6349G的Datasheet PDF文件第6页浏览型号2N6349G的Datasheet PDF文件第7页 
Preferred Device  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full–wave silicon gate controlled solid–state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied main terminal voltage with positive  
or negative gate triggering.  
http://onsemi.com  
TRIACS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
8 AMPERES RMS  
600 thru 800 VOLTS  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Gate Triggering Guaranteed in all Four Quadrants  
For 400 Hz Operation, Consult Factory  
MT2  
MT1  
G
Device Marking: Logo, Device Type, e.g., 2N6344, Date Code  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to +110°C, Sine Wave 50 to  
V
RRM  
J
60 Hz, Gate Open)  
2N6344  
2N6349  
600  
800  
1
2
3
*On–State RMS Current  
I
Amps  
Amps  
T(RMS)  
(T = +80°C)  
8.0  
C
TO–220AB  
CASE 221A  
STYLE 4  
Full Cycle Sine Wave 50 to 60 Hz  
(T = +90°C)  
C
4.0  
*Peak Non–Repetitive Surge Current  
(One Full Cycle, Sine Wave 60 Hz,  
I
100  
TSM  
PIN ASSIGNMENT  
T
C
= +25°C)  
1
2
3
4
Main Terminal 1  
Preceded and followed by rated current  
Circuit Fusing Consideration (t = 8.3 ms)  
*Peak Gate Power  
Main Terminal 2  
Gate  
2
I t  
2
A s  
40  
20  
P
GM  
Watts  
Watt  
Amps  
Volts  
°C  
Main Terminal 2  
(T = +80°C, Pulse Width = 2 µs)  
C
*Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
0.5  
2.0  
10  
G(AV)  
ORDERING INFORMATION  
*Peak Gate Current  
(T = +80°C, Pulse Width = 2.0 µs)  
C
I
GM  
Device  
2N6344  
2N6349  
Package  
TO220AB  
TO220AB  
Shipping  
500/Box  
500/Box  
*Peak Gate Voltage  
(T = +80°C, Pulse Width = 2.0 µs)  
C
V
GM  
*Operating Junction Temperature Range  
*Storage Temperature Range  
T
J
40 to  
+125  
Preferred devices are recommended choices for future use  
and best overall value.  
T
stg  
40 to  
+150  
°C  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Blocking  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
March, 2000 – Rev. 1  
2N6344/D  

与2N6349G相关器件

型号 品牌 描述 获取价格 数据表
2N634A ETC TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-9

获取价格

2N635 ETC TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9

获取价格

2N6350 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR

获取价格

2N6350 NJSEMI NPN POWER DARLINGTON

获取价格

2N6351 NJSEMI NPN POWER DARLINGTON

获取价格

2N6351 MICROSEMI NPN DARLINGTON POWER SILICON TRANSISTOR

获取价格