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2N6111G PDF预览

2N6111G

更新时间: 2024-01-06 12:59:05
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 117K
描述
7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS

2N6111G 数据手册

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PNP - 2N6107, 2N6109,  
2N6111; NPN - 2N6288,  
2N6292  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
These devices are designed for use in generalpurpose amplifier and  
switching applications.  
7 AMPERE  
Features  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
30 50 70 VOLTS, 40 WATTS  
DC Current Gain Specified to 7.0 Amperes  
h
FE  
= 30150 @ I  
C
= 3.0 Adc 2N6111, 2N6288  
= 2.3 (Min) @ I = 7.0 Adc All Devices  
C
CollectorEmitter Sustaining Voltage −  
MARKING  
DIAGRAM  
V
= 30 Vdc (Min) 2N6111, 2N6288  
= 50 Vdc (Min) 2N6109  
CEO(sus)  
= 70 Vdc (Min) 2N6107, 2N6292  
High Current Gain Bandwidth Product  
4
f = 4.0 MHz (Min) @ I = 500 mAdc 2N6288, 90, 92  
T
C
= 10 MHz (Min) @ I = 500 mAdc 2N6107, 09, 11  
C
TO220AB  
CASE 221A  
STYLE 1  
2N6xxxG  
AYWW  
TO220AB Compact Package  
PbFree Packages are Available*  
MAXIMUM RATINGS (Note 1)  
PIN 1. BASE  
1
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
2
Rating  
Symbol  
Value  
Unit  
3
CollectorEmitter Voltage  
2N6111, 2N6288  
2N6109  
V
Vdc  
CEO  
30  
50  
70  
2N6xxx = Specific Device Code  
xxx  
G
A
= See Table on Page 4  
= PbFree Package  
= Assembly Location  
= Year  
2N6107, 2N6292  
CollectorBase Voltage  
2N6111, 2N6288  
2N6109  
V
Vdc  
CB  
40  
60  
80  
Y
WW  
= Work Week  
2N6107, 2N6292  
EmitterBase Voltage  
V
5.0  
Vdc  
Adc  
EB  
Collector Current Continuous  
Peak  
I
7.0  
10  
ORDERING INFORMATION  
C
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 4 of this data sheet.  
Base Current  
I
B
3.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
D
40  
0.32  
W
W/°C  
C
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoCase  
R
3.125  
_C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 9  
2N6107/D  
 

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