2N6109BG

更新时间： 2024-01-10 11:46:06

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关 PC 局域网
页数	文件大小	规格书
8页	78K
描述
7A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N6109BG 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.69	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	7 A	集电极-发射极最大电压：	50 V
配置：	SINGLE	最小直流电流增益 (hFE)：	30
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
功耗环境最大值：	40 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4 MHz
Base Number Matches：	1

2N6109BG 数据手册

ON Semiconductor⁾

PNP

2N6107

Complementary Silicon Plastic

Power Transistors

2N6109

. . . designed for use in general–purpose amplifier and switching

applications.

2N6111

NPN

• DC Current Gain Specified to 7.0 Amperes

= 30–150 @ I

= 3.0 Adc — 2N6111, 2N6288

= 2.3 (Min) @ I = 7.0 Adc — All Devices

2N6288

2N6292

• Collector–Emitter Sustaining Voltage —

= 30 Vdc (Min) — 2N6111, 2N6288

*ON Semiconductor Preferred Device

CEO(sus)

= 50 Vdc (Min) — 2N6109

7 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

= 70 Vdc (Min) — 2N6107, 2N6292

• High Current Gain — Bandwidth Product

f = 4.0 MHz (Min) @ I = 500 mAdc — 2N6288, 90, 92

= 10 MHz (Min) @ I = 500 mAdc — 2N6107, 09, 11

30–50–70 VOLTS

40 WATTS

• TO–220AB Compact Package

*MAXIMUM RATINGS

2N6111

2N6288

2N6107

2N6292

Rating

Symbol

2N6109

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Vdc

Adc

CEO

5.0

Collector Current — Continuous

Peak

7.0

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

Base Current

3.0

Adc

4. COLLECTOR

Total Power Dissipation @ T = 25_C

0.32

Watts

Derate above 25_C

W/_C

CASE 221A–09

TO–220AB

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data.

3.125

_C/W

θJC

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

April, 2002 – Rev. 5

2N6107/D

12 3 4 5 6 7 8

下载PDF

与2N6109BG相关器件

型号	品牌	描述	获取价格	数据表
2N6109BS	ONSEMI	7A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN	获取价格
2N6109C	MOTOROLA	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti	获取价格
2N6109-DR6204	RENESAS	7A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AA	获取价格
2N6109-DR6269	RENESAS	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti	获取价格
2N6109-DR6274	RENESAS	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti	获取价格
2N6109-DR6280	RENESAS	7A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB	获取价格