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2N6042AJ PDF预览

2N6042AJ

更新时间: 2024-02-28 22:37:52
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
8页 115K
描述
8A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

2N6042AJ 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:100 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:75 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N6042AJ 数据手册

 浏览型号2N6042AJ的Datasheet PDF文件第2页浏览型号2N6042AJ的Datasheet PDF文件第3页浏览型号2N6042AJ的Datasheet PDF文件第4页浏览型号2N6042AJ的Datasheet PDF文件第5页浏览型号2N6042AJ的Datasheet PDF文件第6页浏览型号2N6042AJ的Datasheet PDF文件第7页 
ON Semiconductor)  
PNP  
2N6040  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
2N6042  
*
*
2N6043  
NPN  
2N6045  
High DC Current Gain –  
h
= 2500 (Typ) @ I = 4.0 Adc  
FE  
Collector–Emitter Sustaining Voltage – @ 100 mAdc –  
= 60 Vdc (Min) – 2N6040, 2N6043  
C
*ON Semiconductor Preferred Device  
V
CEO(sus)  
= 100 Vdc (Min) – 2N6042, 2N6045  
Low Collector–Emitter Saturation Voltage –  
= 2.0 Vdc (Max) @ I = 4.0 Adc – 2N6043,44  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60–100 VOLTS  
75 WATTS  
V
CE(sat)  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc – 2N6042, 2N6045  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
MAXIMUM RATINGS (1)  
2N6040  
2N6043  
2N6042  
2N6045  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
60  
60  
100  
100  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
4
Collector Current – Continuous  
Peak  
I
C
8.0  
16  
Base Current  
I
B
120  
mAdc  
STYLE 1:  
Total Power Dissipation @ T = 25_C  
P
75  
0.60  
Watts  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
C
D
Derate above 25_C  
W/_C  
1
4. COLLECTOR  
Operating and Storage Junction,  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
2
3
THERMAL CHARACTERISTICS  
Characteristic  
CASE 221A–09  
TO–220AB  
Symbol  
Max  
1.67  
57  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
θ
JC  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
JA  
T
A
T
C
4.0 80  
3.0 60  
T
C
2.0 40  
1.0 20  
T
A
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 4  
2N6040/D  

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