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2N5684G PDF预览

2N5684G

更新时间: 2024-01-21 08:16:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 119K
描述
High-Current Complementary Silicon Power Transistors

2N5684G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:BFM包装说明:LEAD FREE, CASE 197A-05, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:0.66
外壳连接:COLLECTOR最大集电极电流 (IC):50 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-204AE
JESD-30 代码:O-MBFM-P2JESD-609代码:e1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

2N5684G 数据手册

 浏览型号2N5684G的Datasheet PDF文件第2页浏览型号2N5684G的Datasheet PDF文件第3页浏览型号2N5684G的Datasheet PDF文件第4页浏览型号2N5684G的Datasheet PDF文件第5页 
ꢀDC Current Gain - h = 15  
                                                                          
-ꢁ60 @ I = 25 Adc  
C
2N5684 (PNP), 2N5686 (NPN)  
High-Current  
Complementary Silicon  
Power Transistors  
These packages are designed for use in high-power amplifier and  
switching circuit applications.  
http://onsemi.com  
Features  
50 AMPERE  
ꢀHigh Current Capability - I Continuous = 50 Amperes  
C
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60-80 VOLTS, 300 WATTS  
FE  
ꢀLow Collector-Emitter Saturation Voltage -  
ꢂV = 1.0 Vdc (Max) @ I = 25 Adc  
CE(sat)  
C
ꢀPb-Free Packages are Available*  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current - Continuous  
Base Current  
V
CEO  
V
CB  
80  
V
EB  
5.0  
50  
2N568xG  
AYYWW  
MEX  
I
C
I
B
15  
TO-204 (TO-3)  
CASE 197A  
STYLE 1  
Total Power Dissipation @ T = 25°C  
P
300  
1.715  
mW  
mW/°C  
C
D
Derate above 25°C  
Operating and Storage Temperature  
Range  
T , T  
J
-ꢁ65 to +ꢁ200  
°C  
stg  
2N568x = Device Code  
x = 4 or 6  
THERMAL CHARACTERISTICS  
Characteristic  
G
= Pb-Free Package  
= Location Code  
= Year  
Symbol  
Max  
Unit  
A
Thermal Resistance, Junction-to-Case  
0.584  
°C/W  
YY  
WW  
MEX  
q
JC  
= Work Week  
= Country of Orgin  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
ORDERING INFORMATION  
300  
250  
Device  
Package  
Shipping  
2N5684G  
TO-3  
(Pb-Free)  
100 Units/Tray  
2N5686  
TO-3  
100 Units/Tray  
100 Units/Tray  
200  
150  
100  
50  
2N5686G  
TO-3  
(Pb-Free)  
*For additional information on our Pb-Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
0
0
20  
40  
60  
80 100 120 140 160 180 200  
TEMPERATURE (°C)  
Figure 1. Power Derating  
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
October, 2007 - Rev. 12  
1
Publication Order Number:  
2N5684/D  
 

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