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2N5655 PDF预览

2N5655

更新时间: 2024-02-04 16:14:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 90K
描述
Plastic NPN Silicon High-Voltage Power Transistor

2N5655 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.9
最大集电极电流 (IC):0.5 A基于收集器的最大容量:25 pF
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):20 W
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
VCEsat-Max:10 V

2N5655 数据手册

 浏览型号2N5655的Datasheet PDF文件第2页浏览型号2N5655的Datasheet PDF文件第3页浏览型号2N5655的Datasheet PDF文件第4页 
ON Semiconductor)  
2N5655  
2N5657  
Plastic NPN Silicon  
High-Voltage Power Transistor  
. . . designed for use in line–operated equipment such as audio  
output amplifiers; low–current, high–voltage converters; and AC line  
relays.  
0.5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
Excellent DC Current Gain –  
h
= 30–250 @ I = 100 mAdc  
FE  
Current–Gain – Bandwidth Product –  
C
250–350 VOLTS  
20 WATTS  
f = 10 MHz (Min) @ I = 50 mAdc  
T
C
MAXIMUM RATINGS (1)  
Rating  
Symbol  
2N5655  
250  
2N5657  
350  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
275  
375  
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
V
EB  
6.0  
3
2
1
Collector Current – Continuous  
Peak  
I
C
0.5  
1.0  
CASE 77–09  
TO–225AA TYPE  
Base Current  
I
B
0.25  
Adc  
Total Power Dissipation @ T = 25_C  
P
20  
0.16  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
θ
6.25  
_C/W  
JC  
40  
30  
20  
50 mH  
X
200  
TO SCOPE  
Y
H
RELAY  
g
+
+
-
6.0 V  
50 V  
10  
0
300  
1.0  
25  
50  
75  
100  
125  
150  
T , CASE TEMPERATURE (°C)  
C
Figure 2. Sustaining Voltage Test Circuit  
Figure 1. Power Derating  
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 7  
2N5655/D  

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