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2N5631/D PDF预览

2N5631/D

更新时间: 2024-01-01 14:57:36
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管高压
页数 文件大小 规格书
8页 122K
描述
High-Voltage High-Power Transistors

2N5631/D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3包装说明:CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.49
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):4JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

2N5631/D 数据手册

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ON Semiconductort  
NPN  
2N5631  
High-Voltage - High Power  
Transistors  
PNP  
2N6031  
. . . designed for use in high power audio amplifier applications and  
high voltage switching regulator circuits.  
High Collector Emitter Sustaining Voltage –  
16 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
V
= 140 Vdc  
CEO(sus)  
High DC Current Gain – @ I = 8.0 Adc  
C
h
FE  
= 15 (Min)  
140 VOLTS  
200 WATTS  
Low Collector–Emitter Saturation Voltage –  
= 1.0 Vdc (Max) @ I = 10 Adc  
V
CE(sat)  
C
MAXIMUM RATINGS (1)  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
140  
140  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
EB  
V
Collector Current – Continuous  
Peak  
I
C
16  
20  
CASE 1–07  
TO–204AA  
(TO–3)  
Base Current – Continuous  
I
B
5.0  
Adc  
Total Device Dissipation @ T = 25_C  
P
200  
1.14  
Watts  
C
D
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +200  
_C  
stg  
THERMAL CHARACTERISTICS (1)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
200  
θ
0.875  
_C/W  
JC  
150  
100  
50  
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
T , TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 0  
2N5631/D  

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