ON Semiconductor)
2N5191
Silicon NPN Power Transistors
*
2N5192
*ON Semiconductor Preferred Device
. . . for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to PNP 2N5194, 2N5195.
4 AMPERE
POWER TRANSISTORS
SILICON NPN
60–80 VOLTS
40 WATTS
*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Symbol
2N5191
60
2N5192
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
CEO
V
60
80
CB
EB
V
5.0
4.0
1.0
I
C
Base Current
I
B
Total Power Dissipation @ T = 25_C
P
40
320
Watts
mW/_C
_C
C
D
STYLE 1:
Derate above 25_C
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3
2
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +150
1
THERMAL CHARACTERISTICS
Characteristic
CASE 77–09
TO–225AA TYPE
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
3.12
_C
JC
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
2N5191
2N5192
60
80
—
—
C
B
Collector Cutoff Current
I
mAdc
mAdc
CEO
(V
CE
(V
CE
= 60 Vdc, I = 0)
2N5191
2N5192
—
—
1.0
1.0
B
= 80 Vdc, I = 0)
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
(V
CE
(V
CE
= 60 Vdc, V
= 80 Vdc, V
= 60 Vdc, V
= 80 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
2N5191
2N5192
2N5191
2N5192
—
—
—
—
0.1
0.1
2.0
2.0
EB(off)
EB(off)
EB(off)
EB(off)
= 1.5 Vdc, T = 125_C)
C
C
= 1.5 Vdc, T = 125_C)
Collector Cutoff Current
I
mAdc
mAdc
CBO
(V
CB
(V
CB
= 60 Vdc, I = 0)
2N5191
2N5192
—
—
0.1
0.1
E
= 80 Vdc, I = 0)
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
1.0
EBO
BE
C
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 10
2N5191/D