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2N4923 PDF预览

2N4923

更新时间: 2024-02-16 13:28:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 110K
描述
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

2N4923 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-225包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.75Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/224308.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=224308PCB Footprint:https://componentsearchengine.com/footprint.php?partID=224308
3D View:https://componentsearchengine.com/viewer/3D.php?partID=224308Samacsys PartID:224308
Samacsys Image:https://componentsearchengine.com/Images/9/2N4923G.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2N4923G.jpg
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-225 CASE 77-09
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-225JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N4923 数据手册

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ON Semiconductor)  
2N4921  
thru  
Medium-Power Plastic NPN  
Silicon Transistors  
*
2N4923  
. . . designed for driver circuits, switching, and amplifier  
applications. These high–performance plastic devices feature:  
*ON Semiconductor Preferred Device  
1 AMPERE  
GENERAL–PURPOSE  
POWER TRANSISTORS  
40–80 VOLTS  
Low Saturation Voltage —  
V
= 0.6 Vdc (Max) @ I = 1.0 Amp  
CE(sat)  
Excellent Power Dissipation Due to Thermopad Construction —  
C
P
= 30 W @ T = 25_C  
D
C
30 WATTS  
Excellent Safe Operating Area  
Gain Specified to I = 1.0 Amp  
C
Complement to PNP 2N4918, 2N4919, 2N4920  
*MAXIMUM RATINGS  
STYLE 1:  
Rating  
Symbol 2N4921 2N4922 2N4923  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
3
2
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
40  
40  
60  
60  
80  
80  
CEO  
1
V
CB  
EB  
CASE 77–09  
TO–225AA TYPE  
V
5.0  
Collector Current — Continuous (1)  
I
C
1.0  
3.0  
Base Current — Continuous  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
30  
0.24  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating & Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
THERMAL CHARACTERISTICS (2)  
Characteristic  
Symbol  
Max  
4.16  
Unit  
Thermal Resistance, Junction to Case  
θ
_C/W  
JC  
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.  
C
The 3.0 Amp maximum value is based upon actual current handling capability of the  
device (see Figures 5 and 6).  
(2) Recommend use of thermal compound for lowest thermal resistance.  
*Indicates JEDEC Registered Data.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N4921/D  

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