2N3773

更新时间： 2024-01-22 18:11:28

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管局域网
页数	文件大小	规格书
6页	208K
描述
COMPLEMENTARY POWER TRANSISTORS

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N3773 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	TO-3	包装说明：	LEAD FREE, CASE 1-07, TO-3, 2 PIN
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.67	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	140 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-204AA
JESD-30 代码：	O-MBFM-P2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	150 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	PIN/PEG
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N3773 数据手册

Order this document

by 2N3773/D

SEMICONDUCTOR TECHNICAL DATA

The 2N3773 and 2N6609 are PowerBase power transistors designed for high

power audio, disk head positioners and other linear applications. These devices can

also be used in power switching circuits such as relay or solenoid drivers, dc to dc

converters or inverters.

*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

•

High Safe Operating Area (100% Tested) 150 W @ 100 V

Completely Characterized for Linear Operation

High DC Current Gain and Low Saturation Voltage

150 WATTS

= 15 (Min) @ 8 A, 4 V

= 1.4 V (Max) @ I = 8 A, I = 0.8 A

CE(sat)

For Low Distortion Complementary Designs

C B

•

CASE 1–07

TO–204AA

(TO–3)

*MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector Emitter Voltage

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

140

160

CEX

CBO

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

150

0.855

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.17

C/W

θJC

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

下载PDF

与2N3773相关器件

型号	品牌	描述	获取价格	数据表
2N3773/D	ETC	Complementary Silicon Power Transistor	获取价格
2N3773_04	STMICROELECTRONICS	Complementary Silicon Power Transistors	获取价格
2N3773_08	STMICROELECTRONICS	High power NPN transistor	获取价格
2N3773_12	UTC	COMPLEMENTARY SILICON TRANSISTORS	获取价格
2N3773_15	UTC	COMPLEMENTARY SILICON TRANSISTORS	获取价格
2N3773G	ONSEMI	Complementary Silicon Power Transistors	获取价格