2N3055A

更新时间： 2024-02-18 03:46:33

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	238K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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技术参数
数据手册

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2N3055A 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.59	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	15 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	5
JEDEC-95代码：	TO-3	JESD-30 代码：	O-MBFM-P2
元件数量：	1	端子数量：	2
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	2.5 MHz	Base Number Matches：	1

2N3055A 数据手册

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by 2N3055A/D

SEMICONDUCTOR TECHNICAL DATA

. . . PowerBase complementary transistors designed for high power audio, stepping

motor and other linear applications. These devices can also be used in power

switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or

for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.

•

Current–Gain — Bandwidth–Product @ I = 1.0 Adc

= 0.8 MHz (Min) – NPN

= 2.2 MHz (Min) – PNP

*Motorola Preferred Device

•

Safe Operating Area — Rated to 60 V and 120 V, Respectively

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 120 VOLTS

*MAXIMUM RATINGS

2N3055A

MJ2955A

MJ15015

MJ15016

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Unit

Vdc

120

200

CEO

115, 180 WATTS

100

CBO

Collector–Emitter Voltage Base

Reversed Biased

CEV

EBO

Emitter–Base Voltage

Collector Current — Continuous

Base Current

7.0

Vdc

Adc

7.0

CASE 1–07

TO–204AA

(TO–3)

Total Device Dissipation @ T = 25 C

Derate above 25 C

115

0.65

180

1.03

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.52

0.98

C/W

θJC

* Indicates JEDEC Registered Data. (2N3055A)

200

150

MJ15015

MJ15016

100

2N3055A

MJ2955A

100

125

150

175

200

, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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与2N3055A相关器件

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2N3055E	SEME-LAB	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.	获取价格
2N3055E3	MICROSEMI	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal	获取价格