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2N3055 PDF预览

2N3055

更新时间: 2024-01-02 22:35:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
4页 85K
描述
Complementary Silicon Power Transistors

2N3055 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

2N3055 数据手册

 浏览型号2N3055的Datasheet PDF文件第2页浏览型号2N3055的Datasheet PDF文件第3页浏览型号2N3055的Datasheet PDF文件第4页 
2N3055, MJ2955  
Preferred Device  
Complementary Silicon  
Power Transistors  
. . . designed for general−purpose switching and amplifier  
applications.  
DC Current Gain − h = 20−70 @ I = 4 Adc  
FE  
C
http://onsemi.com  
Collector−Emitter Saturation Voltage −  
= 1.1 Vdc (Max) @ I = 4 Adc  
V
CE(sat)  
C
15 A  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
60 V  
Excellent Safe Operating Area  
Pb−Free Package is Available  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Base Current  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
115 W  
V
CEO  
CER  
V
70  
MARKING  
DIAGRAM  
V
CB  
100  
7
V
EB  
I
C
15  
xxxx55  
TO−204AA (TO−3)  
CASE 1−07  
A
I
B
7
YYWW  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
115  
0.657  
W
W/°C  
C
Operating and Storage Junction Tempera-  
ture Range  
T , T  
65 to +200  
°C  
xxxx55 = Device Code  
J
stg  
xxxx= 2N3055 or MJ2955  
= Assembly Location  
= Year  
A
YY  
THERMAL CHARACTERISTICS  
Characteristic  
WW = Work Week  
Symbol  
Max  
Unit  
x
= 1, 2, or 3  
Thermal Resistance, Junction−to−Case  
R
1.52  
°C/W  
q
JC  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Device  
2N3055  
Package  
Shipping  
TO−204AA  
100 Units / Tray  
1 Units / Tubes  
2N3055G  
TO−204AA  
(Pb−Free)  
160  
140  
120  
2N3055H  
MJ2955  
TO−204AA  
TO−204AA  
100 Units / Tray  
100 Units / Tray  
100  
80  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
60  
40  
20  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
Preferred devices are recommended choices for future use  
and best overall value.  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
2N3055/D  
 

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