5秒后页面跳转
14174B PDF预览

14174B

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
安森美 - ONSEMI 触发器
页数 文件大小 规格书
8页 96K
描述
Hex Type D Flip-Flop

14174B 数据手册

 浏览型号14174B的Datasheet PDF文件第2页浏览型号14174B的Datasheet PDF文件第3页浏览型号14174B的Datasheet PDF文件第4页浏览型号14174B的Datasheet PDF文件第5页浏览型号14174B的Datasheet PDF文件第6页浏览型号14174B的Datasheet PDF文件第7页 
MC14174B  
Hex Type D Flip-Flop  
The MC14174B hex type D flip–flop is constructed with MOS  
P–channel and N–channel enhancement mode devices in a single  
monolithic structure. Data on the D inputs which meets the setup time  
requirements is transferred to the Q outputs on the positive edge of the  
clock pulse. All six flip–flops share common clock and reset inputs.  
The reset is active low, and independent of the clock.  
http://onsemi.com  
Static Operation  
All Inputs and Outputs Buffered  
Diode Protection on All Inputs  
MARKING  
DIAGRAMS  
16  
PDIP–16  
P SUFFIX  
CASE 648  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
MC14174BCP  
AWLYYWW  
Capable of Driving Two Low–Power TTL Loads or One Low–Power  
Schottky TTL Load over the Rated Temperature Range  
Functional Equivalent to TTL 74174  
1
16  
SOIC–16  
D SUFFIX  
CASE 751B  
14174B  
AWLYWW  
MAXIMUM RATINGS (Voltages Referenced to V ) (Note 2.)  
1
SS  
Symbol  
Parameter  
Value  
Unit  
V
16  
V
DD  
DC Supply Voltage Range  
–0.5 to +18.0  
SOEIAJ–16  
F SUFFIX  
CASE 966  
MC14174B  
ALYW  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
–0.5 to V + 0.5  
V
DD  
1
I , I  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
in out  
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
P
D
Power Dissipation,  
per Package (Note 3.)  
500  
mW  
= Year  
WW, W = Work Week  
T
Ambient Temperature Range  
Storage Temperature Range  
–55 to +125  
–65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
ORDERING INFORMATION  
T
Lead Temperature  
L
(8–Second Soldering)  
Device  
Package  
PDIP–16  
SOIC–16  
Shipping  
2. Maximum Ratings are those values beyond which damage to the device  
may occur.  
3. Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
MC14174BCP  
MC14174BD  
2000/Box  
48/Rail  
MC14174BDR2  
SOIC–16 2500/Tape & Reel  
MC14174BF  
SOEIAJ–16  
SOEIAJ–16  
See Note 1.  
See Note 1.  
high–impedance circuit. For proper operation, V and V should be constrained  
in  
out  
MC14174BFEL  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
1. For ordering information on the EIAJ version of  
the SOIC packages, please contact your local  
ON Semiconductor representative.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,  
either V or V ). Unused outputs must be left open.  
SS  
DD  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
August, 2000 – Rev. 4  
MC14174B/D  

与14174B相关器件

型号 品牌 描述 获取价格 数据表
1417500 PHOENIX Cable Assembly,

获取价格

1417504 PHOENIX Circular Connector,

获取价格

1417506 PHOENIX Cable Assembly,

获取价格

1417509 PHOENIX Cable Assembly,

获取价格

1417-5-12 WINCHESTER PCB Terminal,

获取价格

1417-55-12 WINCHESTER PCB Terminal,

获取价格