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0IMD9-001-XTP PDF预览

0IMD9-001-XTP

更新时间: 2024-02-13 12:45:06
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
4页 96K
描述
SIGNAL DIODE

0IMD9-001-XTP 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

0IMD9-001-XTP 数据手册

 浏览型号0IMD9-001-XTP的Datasheet PDF文件第2页浏览型号0IMD9-001-XTP的Datasheet PDF文件第3页浏览型号0IMD9-001-XTP的Datasheet PDF文件第4页 
0IMD9-001  
Product Preview  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is ideal for medical applications where space is limited.  
www.onsemi.com  
Features  
30 VOLT SILICON  
HOTCARRIER DETECTOR  
AND SWITCHING DIODES  
Extremely Fast Switching Speed  
Low Forward Voltage 0.35 V (Typ) @ I = 10 mAdc  
F
Device Marking: MAM  
AEC Qualified and Built In Medical Flow  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
SOD323  
CASE 477  
STYLE 1  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Symbol Value  
30  
Unit  
Reverse Voltage  
V
V
R
1
2
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
CATHODE  
ANODE  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
MAM G  
Characteristic  
Symbol  
Max  
Unit  
G
2
1
Total Device Dissipation FR5 Board,  
P
D
(Note 1)  
T = 25°C  
200  
1.57  
mW  
mW/°C  
A
MA  
M
= Device Code  
= Date Code  
Derate above 25°C  
Forward Current (DC)  
I
200  
mA  
mA  
G
= PbFree Package  
F
Max  
(Note: Microdot may be in either location)  
NonRepetitive Peak Forward Current,  
t < 10 msec  
p
I
FSM  
600  
300  
635  
ORDERING INFORMATION  
Repetitive Peak Forward Current  
Pulse Wave = 1 sec, Duty Cycle = 66%  
I
mA  
FRM  
Device  
Package  
Shipping  
0IMD9001XTP  
SOD323  
(PbFree)  
3000 /  
Tape & Reel  
Thermal Resistance  
JunctiontoAmbient  
R
°C/W  
°C  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage Temperature Range  
T , T  
55  
to150  
J
stg  
1. FR4 Minimum Pad  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
October, 2014 Rev. P0  
0IMD9001/D  

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