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ONET8551TYS9 PDF预览

ONET8551TYS9

更新时间: 2024-09-17 11:07:59
品牌 Logo 应用领域
德州仪器 - TI ATM异步传输模式放大器电信ATM集成电路SONET集成电路SDH集成电路电信集成电路电信电路
页数 文件大小 规格书
16页 483K
描述
具有 RSSI 的 11.3Gbps 限幅跨阻放大器 | YS | 0 | -40 to 100

ONET8551TYS9 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:DIE,Reach Compliance Code:compliant
Factory Lead Time:6 weeks风险等级:5.81
Is Samacsys:NJESD-30 代码:R-XUUC-N
长度:1.036 mm功能数量:1
端子数量:20最高工作温度:100 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:RECTANGULAR
封装形式:UNCASED CHIP标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:ATM/SONET/SDH SUPPORT CIRCUIT
温度等级:INDUSTRIAL端子形式:NO LEAD
端子位置:UPPER宽度:0.87 mm
Base Number Matches:1

ONET8551TYS9 数据手册

 浏览型号ONET8551TYS9的Datasheet PDF文件第2页浏览型号ONET8551TYS9的Datasheet PDF文件第3页浏览型号ONET8551TYS9的Datasheet PDF文件第4页浏览型号ONET8551TYS9的Datasheet PDF文件第5页浏览型号ONET8551TYS9的Datasheet PDF文件第6页浏览型号ONET8551TYS9的Datasheet PDF文件第7页 
ONET8551T  
www.ti.com  
SLLSEI5 OCTOBER 2013  
11.3-Gbps Limiting Transimpedance Amplifier With RSSI  
Check for Samples: ONET8551T  
1
FEATURES  
APPLICATIONS  
9-GHz Bandwidth  
10-G Ethernet  
10-kΩ Differential Small Signal  
Transimpedance  
8-G and 10-G Fibre Channel  
10-G EPON  
–20-dBm Sensitivity  
SONET OC-192  
0.9-μARMS Input Referred Noise  
2.5-mAp-p Input Overload Current  
Received Signal Strength Indication (RSSI)  
92-mW Typical Power Dissipation  
6-G and 10-G CPRI and OBSAI  
PIN and APD Preamplifier-Receivers  
DESCRIPTION  
The ONET8551T device is a high-speed, high-gain,  
limiting transimpedance amplifier used in optical  
receivers with data rates up to 11.3 Gbps. It features  
low-input referred noise, 9-GHz bandwidth, 10-kΩ  
small signal transimpedance, and a received signal  
strength indicator (RSSI).  
CML Data Outputs With On-Chip 50-Ω Back-  
Termination  
On Chip Supply Filter Capacitor  
Single +3.3-V Supply  
Die Size: 870 μm x 1036 μm  
The ONET8551T device is available in die form,  
includes an on-chip VCC bypass capacitor, and is  
optimized for packaging in a TO can.  
The ONET8551T device requires a single +3.3-V  
supply. The power-efficient design typically dissipates  
less than 95 mW. The device is characterized for  
operation from –40°C to 100°C case (IC back-side)  
temperature.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013, Texas Instruments Incorporated  

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