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ONET8551TYS4

更新时间： 2024-09-26 11:07:59

品牌	Logo	应用领域
德州仪器 - TI		ATM 异步传输模式放大器电信 ATM集成电路 SONET集成电路 SDH集成电路电信电路
页数	文件大小	规格书
16页	483K
描述
具有 RSSI 的 11.3Gbps 限幅跨阻放大器 \| YS \| 0 \| -40 to 100

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数据手册

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ONET8551TYS4 数据手册

ONET8551T

www.ti.com

SLLSEI5 –OCTOBER 2013

11.3-Gbps Limiting Transimpedance Amplifier With RSSI

Check for Samples: ONET8551T

FEATURES

APPLICATIONS

•

9-GHz Bandwidth

•

10-G Ethernet

10-kΩ Differential Small Signal

Transimpedance

8-G and 10-G Fibre Channel

10-G EPON

•

–20-dBm Sensitivity

SONET OC-192

0.9-μA_RMSInput Referred Noise

2.5-mA_p-pInput Overload Current

Received Signal Strength Indication (RSSI)

92-mW Typical Power Dissipation

6-G and 10-G CPRI and OBSAI

PIN and APD Preamplifier-Receivers

DESCRIPTION

The ONET8551T device is a high-speed, high-gain,

limiting transimpedance amplifier used in optical

receivers with data rates up to 11.3 Gbps. It features

low-input referred noise, 9-GHz bandwidth, 10-kΩ

small signal transimpedance, and a received signal

strength indicator (RSSI).

CML Data Outputs With On-Chip 50-Ω Back-

Termination

•

On Chip Supply Filter Capacitor

Single +3.3-V Supply

Die Size: 870 μm x 1036 μm

The ONET8551T device is available in die form,

includes an on-chip VCC bypass capacitor, and is

optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V

supply. The power-efficient design typically dissipates

less than 95 mW. The device is characterized for

operation from –40°C to 100°C case (IC back-side)

temperature.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...16

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