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ONET8531TYS9 PDF预览

ONET8531TYS9

更新时间: 2024-11-10 11:07:59
品牌 Logo 应用领域
德州仪器 - TI ATM异步传输模式放大器电信电信集成电路
页数 文件大小 规格书
15页 387K
描述
具有 RSSI 的 11.3Gbps 5kΩ 限幅跨阻放大器 | Y | 0 | -40 to 100

ONET8531TYS9 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DIE包装说明:DIE, DIE OR CHIP
针数:19Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.82
应用程序:SONETJESD-30 代码:R-XUUC-N19
长度:1.195 mm功能数量:1
端子数量:19最高工作温度:100 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:DIE OR CHIP
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified子类别:Other Telecom ICs
最大压摆率:44 mA标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:ATM/SONET/SDH SUPPORT CIRCUIT
温度等级:INDUSTRIAL端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:0.94 mmBase Number Matches:1

ONET8531TYS9 数据手册

 浏览型号ONET8531TYS9的Datasheet PDF文件第2页浏览型号ONET8531TYS9的Datasheet PDF文件第3页浏览型号ONET8531TYS9的Datasheet PDF文件第4页浏览型号ONET8531TYS9的Datasheet PDF文件第5页浏览型号ONET8531TYS9的Datasheet PDF文件第6页浏览型号ONET8531TYS9的Datasheet PDF文件第7页 
ONET8531T  
www.ti.com  
SLLS891FEBRUARY 2008  
11.3 Gbps Limiting Transimpedance Amplifier With RSSI  
1
FEATURES  
APPLICATIONS  
SONET OC-192  
SFP+ Optical Receivers  
10× Fibre Channel Optical Receivers  
10G Ethernet Receivers  
PIN Preamplifier-Receivers  
APD Preamplifier Receivers  
10 GHz Bandwidth  
4.5 kDifferential Small Signal  
Transimpedance  
2.5 mAp-p Input Overload Current  
Received Signal Strength Indication (RSSI)  
100 mW Typical Power Dissipation  
CML Data Outputs With On-Chip 50 Ω  
Back-Termination  
On Chip Supply Filter Capacitor  
Single 3.3 V Supply  
Die Size: 945 × 1200 µm  
Case temperature operation: –40°C to 100°C  
DESCRIPTION  
The ONET8531T is a high-speed and high-gain limiting-transimpedance amplifier, used in optical receivers with  
data rates up to 12.5 Gbps. It features low input referred noise, 10 GHz bandwidth, 4.5 ksmall signal  
transimpedance, and a received signal strength indicator (RSSI).  
The ONET8531T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for  
packaging in a TO can.  
The ONET8531T requires a single +3.3V ± 10% supply and its power efficient design typically dissipates less  
than 105 mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2008, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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