Transmissive Photosensors (Photo lnterrupters)
CNZ1110 (ON1110)
Photo Interrupter
Unit: mm
Mark for Indicating
LED side
For contactless SW, object detection
A - A'
Cross section
2.8±±.2
13.8±±.3
■ Overview
6
±±.2
CNZ1110 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
±.4±±.1
A
±.5
(2)
±.7
3
■ Features
• Highly precise position detection: 0.3 mm
• Fast response tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
• Small package used for saving mounting space
■ Absolute Maximum Ratings Ta = 25°C
A'
(3)
(4)
(2.54)
1: Anode
2: Cathode
3: Collector
4: Emitter
(1)
(1±)
PISTR104-009 Package
Parameter
Symbol Rating
Unit
V
Internal Connection
Reverse voltage
VR
IF
3
Input (Light
emitting diode) Forward current
Power dissipation *
50
75
30
mA
mW
V
2
3
4
1
PD
Output (Photo Collector-emitter voltage VCEO
transistor)
(Base open)
1
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
Collector power dissipation *
IC
20
100
mA
mW
°C
Note) 1: Input power derating ratio is 1.0 mW/°C at
*
2
PC
Ta ≥ 25°C.
Temperature Operating ambient temperature Topr
Storage temperature
−25 to +85
2: Output power derating ratio is 1.33 mW/°C
at Ta ≥ 25°C.
*
Tstg −30 to +100
°C
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
1.5
10
Unit
V
Input
Forward voltage
IF = 50 mA
VR = 3 V
1.2
characteristics Reverse current
Terminal capacitance
IR
µA
pF
Ct
VR = 0 V, f = 1 MHz
VCE = 10 V
50
5
Output
Collector-emitter cutoff current
ICEO
200
nA
characteristics (Base open)
Collector-emitter capacitance
CC
IC
VCE = 10 V, f = 1 MHz
VCE = 10 V, IF = 20 mA
pF
mA
V
2
Transfer
Collector current *
0.3
characteristics
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 0.1 mA
0.3
1
Rise time *
tr
tf
VCC = 10 V, IC = 1 mA, RL = 100 Ω
6
6
µs
1
Fall time *
µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
Sig. in
VCC
td: Delay time
tr: Rise time
tf: Fall time
(Input pulse)
90%
10%
(Output pulse)
Sig. out
td
3. 1: Switching time measurement circuit
*
RL
tr
tf
50 Ω
2: Rank classification
*
Rank
Q
R
S
IC (mA)
0.30 to 0.85
0.75 to 2.15
> 1.85
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00030BED
1