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EE-SX1049 PDF预览

EE-SX1049

更新时间: 2024-02-17 03:54:15
品牌 Logo 应用领域
欧姆龙 - OMRON 光电
页数 文件大小 规格书
4页 83K
描述
Photomicrosensor (Transmissive)

EE-SX1049 数据手册

 浏览型号EE-SX1049的Datasheet PDF文件第2页浏览型号EE-SX1049的Datasheet PDF文件第3页浏览型号EE-SX1049的Datasheet PDF文件第4页 
Photomicrosensor (Transmissive)  
EE-SX1049  
I Dimensions  
Note: All units are in millimeters unless otherwise indicated.  
I Features  
Compact with a slot width of 2 mm.  
PCB mounting type.  
High resolution with a 0.5-mm-wide aperture.  
9
I Absolute Maximum Ratings (Ta = 25°C)  
4
Optical  
axis  
Item  
Symbol  
Rated value  
50 mA (see note 1)  
1 A (see note 2)  
4 V  
Four, C0.3  
Emitter  
Forward current  
IF  
2
Two, 0.5  
A
B
Pulse forward current IFP  
1.5  
2 max.  
2 max.  
Optical  
Optical  
axis  
Optical  
axis  
Reverse voltage  
VR  
0
5.2 0.2  
axis  
Detector  
Collector–Emitter  
voltage  
VCEO  
30 V  
1.5  
1.2  
9 min.  
Emitter–Collector  
voltage  
VECO  
---  
Four, 0.25  
0.7 0.1  
C0.3  
Four, 0.5  
0.25 max.  
0.3 max.  
0
Collector current  
IC  
20 mA  
1.20.05 dia.  
E
C
2.5  
K
2.5  
A
A
6
B
Cross section AA  
Cross section BB  
Collector dissipation PC  
100 mW (see note 1)  
–25°C to 85°C  
–30°C to 100°C  
260°C (see note 3)  
0.2  
Internal Circuit  
Ambient  
temperature  
Operating  
Storage  
Topr  
Tstg  
Tsol  
K
A
C
E
Unless otherwise specified, the  
tolerances are as shown below.  
Soldering temperature  
Note: 1. Refer to the temperature rating chart if the ambient temper-  
ature exceeds 25°C.  
Dimensions  
Tolerance  
3 mm max.  
0.3  
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.  
3. Complete soldering within 10 seconds.  
Terminal No.  
Name  
3 < mm 6  
6 < mm 10  
0.375  
0.45  
A
K
C
E
Anode  
Cathode  
Collector  
Emitter  
I Ordering Information  
10 < mm 18  
18 < mm 30  
0.55  
0.65  
Description  
Model  
EE-SX1049  
Photomicrosensor (transmissive)  
I Electrical and Optical Characteristics (Ta = 25°C)  
Item  
Symbol  
Value  
1.2 V typ., 1.5 V max.  
0.01 µA typ., 10 µA max.  
940 nm typ.  
Condition  
Emitter  
Forward voltage  
Reverse current  
Peak emission wavelength  
Light current  
VF  
IR  
IF = 30 mA  
VR = 4 V  
λP  
IL  
IF = 20 mA  
Detector  
0.5 mA min., 14 mA max.  
2 nA typ., 200 nA max.  
---  
IF = 20 mA, VCE = 10 V  
VCE = 10 V, 0 lx  
---  
Dark current  
ID  
Leakage current  
ILEAK  
Collector–Emitter saturated  
voltage  
VCE (sat)  
0.1 V typ., 0.4 V max.  
IF = 20 mA, IL = 0.1 mA  
Peak spectral sensitivity  
wavelength  
λP  
850 nm typ.  
VCE = 10 V  
Rising time  
Falling time  
tr  
tf  
4 µs typ.  
4 µs typ.  
V
CC = 5 V, RL = 100 , IL = 5 mA  
CC = 5 V, RL = 100 , IL = 5 mA  
V
150  
Photomicrosensor (Transmissive) EE-SX1049  

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