是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SOP, | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 最大输入电压: | 6.5 V |
最小输入电压: | 4.5 V | JESD-30 代码: | S-XDSO-G8 |
长度: | 19.05 mm | 功能数量: | 1 |
端子数量: | 8 | 工作温度TJ-Max: | 125 °C |
工作温度TJ-Min: | -55 °C | 最大输出电流 1: | 3 A |
最大输出电压 1: | 3.465 V | 最小输出电压 1: | 3.135 V |
标称输出电压 1: | 3.3 V | 封装主体材料: | UNSPECIFIED |
封装代码: | SOP | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 调节器类型: | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR |
座面最大高度: | 4.572 mm | 表面贴装: | YES |
端子形式: | GULL WING | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 19.05 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
OM8P20A | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 8A I(D) | |
OM8P20CSAM | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.75ohm, 1-Element, P-Channel, Silicon, Meta | |
OM8P20CSAT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.75ohm, 1-Element, P-Channel, Silicon, Meta | |
OM8P20CSAV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.75ohm, 1-Element, P-Channel, Silicon, Meta | |
OM8P20CST | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
OM8P20CSTM | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
OM8P20CSTV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
OM8P20SA | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.75ohm, 1-Element, P-Channel, Silicon, Meta | |
OM8P20SAM | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.75ohm, 1-Element, P-Channel, Silicon, Meta | |
OM8P20ST | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA |