Datasheet > OM75N05SC

OM75N05SC

更新时间： 2024-11-22 02:55:35

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	75K
描述
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

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数据手册

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OM75N05SC 数据手册

OM55N10SC OM60N10SC OM75N05SC OM75N06SC

OM55N10SA OM75N05SA OM75N06SA

LOW VOLTAGE, LOW R_DS(on)POWER MOSFETS

IN HERMETIC ISOLATED PACKAGE

50V, 60V, And 100V Ultra Low R_DS(on)

Power MOSFETs In TO-254 And TO-258

Isolated Packages

FEATURES

• Isolated Hermetic Metal Packages

• Ultra Low R_DS(on)

• Low Conductive Loss/Low Gate Charge

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Ceramic Feedthroughs available

DESCRIPTION

This series of hermetic packaged MOSFETs are ideally suited for low voltage

applications; battery powered voltage power supplies, motor controls, dc to dc

converters and synchronous rectification. The low conduction loss allows smaller

heat sinking and the low gate change simpler drive circuitry.

MAXIMUM RATINGS (Per Device)

PART NO.

OM60N10SC

OM55N10SC

OM55N10SA

OM75N06SC

OM75N06SA

OM75N05SC

OM75N05SA

V_DS(V)

100

R_DS(on)( )

.025

I_D(A)

Package

TO-258AA

TO-254AA

TO-258AA

TO-254AA

TO-258AA

TO-254AA

.030

.035

.016

3.1

.018

.016

.018

PIN CONNECTION

SCHEMATIC

TO-254AA

TO-258AA

Drain

Gate

Source

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

4 11 R1

Supersedes 2 07 R0

3.1 - 47

12 3 4 5 6 7 8

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OM75N06NKT	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
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OM75N06SC	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met
OM75N06SCV	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met
OM75N06SW	ETC	获取价格	60V Single N-Channel Hi-Rel MOSFET in a D3 package
OM75N10SA	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide S