是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, METAL, TO-254AA, 3 PIN | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.47 |
雪崩能效等级(Eas): | 900 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (Abs) (ID): | 75 A | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.018 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | R-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 225 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
OM75N05SAV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 50V, 0.018ohm, 1-Element, P-Channel, Silicon, Met | |
OM75N05SC | INFINEON |
获取价格 |
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | |
OM75N05SCT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 50V, 0.016ohm, 1-Element, P-Channel, Silicon, Met | |
OM75N05SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 50V, 0.016ohm, 1-Element, P-Channel, Silicon, Met | |
OM75N05SW | ETC |
获取价格 |
50V Single N-Channel Hi-Rel MOSFET in a D3 package | |
OM75N06NK | ETC |
获取价格 |
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | |
OM75N06NKT | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
OM75N06SA | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Met | |
OM75N06SC | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met | |
OM75N06SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met |