Datasheet > OM6509CSA

OM6509CSA

更新时间： 2024-11-24 05:25:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
2页	21K
描述
Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

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OM6509CSA 数据手册

OM6508SA

OM6509SA

INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-254AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT

With a Soft Recovery Diode

In A Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• Fast Turn-Off

• Low Conductive Losses

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Free Wheeling Diode

• Ceramic Feedthroughs Available

DESCRIPTION

This power module includes an IGBT power transistor which features a high

impedance insulated gate and the low on-resistance characteristics of bipolar

transistor with a free wheeling diode connected across the emitter and collector.

These devices are ideally suited for motor drives, UPS converters, power supplies

and resonant power converters.

MAXIMUM RATINGS @ 25°C Unless Specified Otherwise

3.1

PART

I_C(Cont.)

@ 90°C, A

V_(BR)CES

V_{CE (sat)}(Typ.)

T_f(Typ.)

q_JC

P_D

T_J

°C

NUMBER

°C/W

OM6508SA

OM6509SA

500

2.8

400

3.8

3.0

150

SCHEMATIC

MECHANICAL OUTLINE

.545

.535

.050

.040

.144 DIA.

Collector

.800

.790

.685

.665

.550

.530

PIN CONNECTION

Pin 1: Collector

Pin 2: Emitter

Pin 3: Gate

Gate

.550

.510

.005

.045

.035

.150 TYP.

Emitter

.260

.249

.150 TYP.

PACKAGE OPTIONS

6 PIN SIP

Z-TAB

MOD PAK

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.

IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

4 11 R2

Supersedes 2 07 R1

3.1 - 147

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OM6515SS	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, ME