Datasheet > OM6408SDV

OM6408SDV

更新时间： 2024-11-20 07:55:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
4页	48K
描述
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6408SDV 数据手册

OM6405SD

OM6406SD

OM6407SD

OM6408SD

FOUR UNCOMMITTED MOSFETS IN ONE

HERMETIC ISOLATED PACKAGE

Four Uncommitted 100 V To 500 V, 4 To 8 Amp,

N-Channel Power MOSFETs In One Package

FEATURES

• Isolated Hermetic Metal Package

• Small Mechanical Outline

• Fast Switching, Low Drive Current

• Ease Of Paralleling For Added Power

• Low R_DS(on)

• Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS (Per Device)

PART NUMBER

V_DS

R_DS(on)

I_D

OM6405SD

OM6406SD

OM6407SD

OM6408SD

100 V

200 V

400 V

500 V

.20

.44

14 A

9 A

3.1

1.05

1.60

5.5 A

4.5 A

SCHEMATIC

PIN CONNECTION

16 15 14 13 12 11 10 9

Pin 1, 8, 9 & 16 Are Uncommitted.

4 11 R3

Supersedes 8 10 R2

3.1 - 135

12 3 4

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