型号 | 品牌 | 获取价格 | 描述 | 数据表 |
OM3056/20 | NXP |
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RF/Microwave Amplifier, 950 MHz - 2050 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | |
OM3056/20 | PHILIPS |
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RF/Microwave Amplifier, Hybrid, | |
OM30G5E-R58 | OHMITE |
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RES 3 OHM 1W 5% AXIAL | |
OM30N20C | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 30A I(D) | |
OM30SP1 | INFINEON |
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Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal- | |
OM3105N | NXP |
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Hybrid integrated circuits for inductive proximity detectors | |
OM3105P | NXP |
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Hybrid integrated circuits for inductive proximity detectors | |
OM3115N | NXP |
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Hybrid integrated circuits for inductive proximity detectors | |
OM3115P | NXP |
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Hybrid integrated circuits for inductive proximity detectors | |
OM320 | NXP |
获取价格 |
RF/Microwave Amplifier, 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |